IPD028N06NF2SATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPD028N06NF2SATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD028N06NF2SATMA1 - 60V 139A 2.85mΞ© OptiMOS N-MOSFET | Infineon
IPD028N06NF2SATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IPD028N06NF2SATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD028N06NF2SATMA1 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology Family | OptiMOS 5 60V | β |
| Drain-Source Voltage (VDS) max | 60 V | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | 24 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 139 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 2.85 mΞ© | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | β |
| Power Dissipation at TA=25Β°C | 3 W | β |
| Power Dissipation at TC=25Β°C | 150 W | β |
| Operating Junction Temperature Range | -55 C to +175 C | β |
| Package | PG-TO252-3 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain-tab, Source) | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Packing | Tape & Reel (T&R) | β |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Technology | β | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |