IPD50N04S408ATMA1 vs BSC019N08NS5ATMA1 Comparison

Detailed side-by-side comparison of IPD50N04S408ATMA1 by Infineon and BSC019N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD50N04S408ATMA1 BSC019N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 —
Polarity N-Channel N-Channel
Mode Enhancement-mode —
Drain-Source Voltage (V DS) 40 V —
Continuous Drain Current (I D, Tc) 50 A —
Power Dissipation (P D, Tc) 46 W —
Package PG-TO252-3-313 (DPAK) PG-TSON-8-3 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 °C to +175 °C -55 C to +150 C
MSL Level MSL1 (260 °C peak reflow) 1
Automotive Qualification AEC-Q101 —
Avalanche Tested 100 % Avalanche tested —
Green Package (RoHS) RoHS compliant —
Gate Threshold Voltage (V GS(th)) [DATA_NEEDED: V GS(th) typical] —
On-State Resistance (R DS(on)) [DATA_NEEDED: R DS(on) at V GS = 10 V] —
Total Gate Charge (Q G) [DATA_NEEDED: Q G typical] —
Technology — OptiMOS 5 (N-channel trench)
Drain-Source Voltage (VDS) max — 80 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at TA=25C — 28 A
Continuous Drain Current (ID) at TC=25C — 237 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max at VGS=10V — 1.9 mOhm
Gate Threshold Voltage VGS(th) typ — 3.0 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 214 W
RoHS Status — Compliant
Avalanche Rated — Yes

Datasheets & Resources

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