IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon
MPN: IPD50N04S408ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.3 | $1.30 |
| 10 | $1.17 | $11.70 |
| 100 | $0.98 | $98.00 |
| 500 | $0.82 | $410.00 |
| 1,000 | $0.69 | $690.00 |
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View Datasheet →IPD50N04S408ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-T2 |
| Polarity | N-Channel |
| Mode | Enhancement-mode |
| Drain-Source Voltage (V DS) | 40 V |
| Continuous Drain Current (I D, Tc) | 50 A |
| Power Dissipation (P D, Tc) | 46 W |
| Package | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 °C to +175 °C |
| MSL Level | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Avalanche Tested | 100 % Avalanche tested |
| Green Package (RoHS) | RoHS compliant |
IPD50N04S408ATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input |
| Pin 2 | DRAIN — Drain connection (also tied to exposed metal tab) |
| Pin 3 | SOURCE — Source connection |
Safe Operating Area
Typical Applications
IPD50N04S408ATMA1 is suitable for 6 applications: Automotive 12 V Load Switching, DC-DC Converter Synchronous Rectification, Motor Drive H-Bridge / Half-Bridge, Battery Protection and Disconnect, Solenoid and Valve Drivers, Power OR-ing and Hot Swap.
Automotive 12 V Load Switching
The IPD50N04S408ATMA1 is ideal for automotive 12 V load switching in body electronics modules, lighting drivers, and seat-control circuits. Its 40 V drain-source rating provides ample margin above the 12 V automotive bus while tolerating load-dump transients up to 35 V. The 50 A continuous drain current easily handles peak inrush of bulbs, motors, and solenoids. AEC-Q101 qualification and 175 °C junction rating guarantee reliability under hood and cabin thermal stress. Engineers typically place the MOSFET on the high-side of the load with a 10 V gate drive from a pre-regulator and a 10 kΩ gate-source pull-down to prevent false turn-on from leakage paths.
Recommended
DC-DC Converter Synchronous Rectification
In non-isolated buck and synchronous rectifier stages for 12 V automotive or 24 V industrial rails, the IPD50N04S408ATMA1 serves as the low-side synchronous FET. Its low R DS(on) minimizes conduction loss at high duty cycles, while the 46 W power dissipation rating supports continuous 30-40 A output current with a properly thermal-managed PCB. The 40 V V DS rating safely accommodates ringing from the high-side MOSFET's drain-node transition. Place the part adjacent to the controller with a 10 kΩ gate-source pull-down and a small gate-series resistor (10-22 Ω) to control ringing.
Recommended
Motor Drive H-Bridge / Half-Bridge
The IPD50N04S408ATMA1 is well suited for low-voltage brushed-DC motor drive H-bridges and three-phase inverter low-side stages in 12 V automotive applications such as window lift, sunroof, and pump controllers. The 50 A continuous rating handles typical motor stall currents of 20-30 A, while the 40 V V DS margin tolerates inductive flyback. Pair each IPD50N04S408ATMA1 with a dedicated gate driver such as the IR2104STRPBF and use Schottky freewheeling across the motor terminals for additional protection. The AEC-Q101 qualification supports automotive OEM qualification cycles.
Recommended
Battery Protection and Disconnect
Used as the main disconnect MOSFET in 12 V lead-acid or lithium battery management systems, the IPD50N04S408ATMA1 offers 50 A continuous current handling and 46 W dissipation in a compact DPAK. The low R DS(on) reduces steady-state loss across the protection FET, preserving battery runtime. The exposed drain tab simplifies thermal coupling to the chassis for heat-sinking. The 100 % avalanche rating adds robustness against reverse-battery and load-dump transients common in automotive battery systems.
Recommended
Solenoid and Valve Drivers
Industrial solenoid valves, fuel injectors, and pneumatic actuators are well served by the IPD50N04S408ATMA1. The 50 A peak capability supports the high inrush current typical of solenoid activation, while the 40 V V DS rating comfortably exceeds 24 V industrial bus levels. Place a flyback diode across the solenoid coil to clamp inductive kick. The automotive-grade robustness also suits harsh industrial environments with wide temperature swings and vibration.
Recommended
Power OR-ing and Hot Swap
In redundant power-supply OR-ing and hot-swap controller circuits, the IPD50N04S408ATMA1 acts as the disconnect element between the source and the load. The low R DS(on) minimizes voltage drop and dissipation, while the 40 V V DS rating tolerates transients during plug-in events. Connect the gate to a controlled hot-swap controller reference through a resistor divider; the 100 % avalanche tested rating provides safety margin against inrush transients and accidental reverse polarity events.
Recommended
Recommended Products Summary
Engineering reference data for IPD50N04S408ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD50N04S4L08ATMA1 | IPD90N04S403ATMA1 | BSC019N08NS5ATMA1 | BSC014N04LSATMA1 |
|---|---|---|---|---|---|
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (V DS) | 40 V | 40 V | 40 V | 80 V | 40 V |
| Continuous Drain Current (I D) | 50 A | 50 A | 90 A | 100 A | 100 A+ |
| Power Dissipation (P D, Tc) | 46 W | 46 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Generation | OptiMOS-T2 | OptiMOS-T2 (logic-level) | OptiMOS-T2 | OptiMOS 5 | OptiMOS 5 |
| Gate Drive | Standard (10 V) | Logic-level (3.3-5V) | Standard (10 V) | Standard (10 V) | Logic-level (4.5V) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Key Differentiators
- AEC-Q101 automotive qualification (vs IPD50N04S4L08ATMA1)
- Balanced 40V/50A rating (vs BSC019N08NS5ATMA1 (OptiMOS 5, 80V))
- Lower on-state resistance per cost (vs IPD90N04S403ATMA1 (90A OptiMOS-T2))
Design Notes
Estimated: At continuous 30 A load on PG-TO252-3-313 with typical R DS(on) of ~5 mΩ at V GS = 10 V, conduction loss is approximately 4.5 W. The exposed drain tab must be soldered to at least 1 cm² of 2 oz copper to keep junction temperature below 125 °C at 25 °C ambient. For full 50 A continuous operation, add an external heat sink or substantially larger copper pour. The 175 °C maximum junction rating allows brief overload events but continuous operation should target T J < 150 °C for reliability margin.
Use a star-grounded layout that ties the source Kelvin connection, gate driver return, and controller ground at a single point to avoid source-inductance-induced gate-rail collapse during switching transitions. Place a 10 kΩ gate-source resistor directly across the gate and source pins to prevent floating-gate turn-on. Add a small (10-22 Ω) gate-series resistor to control ringing and EMI. Place the input bypass capacitor as close to the drain tab as physically possible.
Common pitfalls include: (1) driving the gate with only 5 V when the standard part needs 10 V for full R DS(on) specification, (2) omitting the gate-source pull-down resistor which causes floating-gate turn-on during controller reset, (3) undersizing the copper pour which causes thermal runaway at moderate current, (4) using the wrong DPAK footprint variant (TO-252 vs TO-252-3-313 - the 313 variant has extended lead length). Always verify the exact footprint against the manufacturer datasheet before PCB fab.
Compliance Information
AEC-Q101 qualified per the manufacturer datasheet (automotive standard, equivalent in spirit to AEC-Q100 for discretes). RoHS compliant green package. MSL1 rated to 260 °C peak reflow. 100 % avalanche tested. Operating junction temperature -55 °C to +175 °C.
