IPD50N06S409ATMA2 vs IPB35N10S3L26ATMA1 Comparison
Detailed side-by-side comparison of IPD50N06S409ATMA2 by Infineon and IPB35N10S3L26ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD50N06S409ATMA2 - 60V 50A 9mΞ© OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 β ActiveInfineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 β ActiveSpecification Comparison
| Parameter | IPD50N06S409ATMA2 | IPB35N10S3L26ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $1.15 |
| Technology | N-Channel MOSFET (OptiMOS) | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc | 50 A | β |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΞ© | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Power Dissipation (Pd) at Tc | 71 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TO252-3-11 (DPAK) | β |
| Pin Count | 3 (2 + Tab) | 3 (Gate, Drain, Source) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-T |
| Channel Type | β | N-Channel |
| Maximum Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC | β | 35 A |
| Power Dissipation (PD) at TC | β | 71 W |
| Package Type | β | PG-TO263-3 (D2PAK-2) |
| Channel Mode | β | Enhancement |
| RDS(on) (typical per Infineon product page) | β | 26.3 mΞ© |
| Typical Gate Charge Qg @ Vgs | β | 80 nC |
| Maximum Drain-Source Resistance Rds | β | 1.7 mΞ© (per RS Components listing) |
| Minimum Operating Temperature | β | -55 C |
| Maximum Power Dissipation Pd | β | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | β | [DATA_NEEDED: AEC-Q101 qualification status] |