IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
MPN: IPB35N10S3L26ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.89 | $189.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.38 | $1,380.00 |
| 3,000 | $1.15 | $3,450.00 |
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View Datasheet →IPB35N10S3L26ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-T |
| Channel Type | N-Channel |
| Maximum Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC | 35 A |
| Power Dissipation (PD) at TC | 71 W |
| Package Type | PG-TO263-3 (D2PAK-2) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) |
| Channel Mode | Enhancement |
| RDS(on) (typical per Infineon product page) | 26.3 mΩ |
| Typical Gate Charge Qg @ Vgs | 80 nC |
| Maximum Drain-Source Resistance Rds | 1.7 mΩ (per RS Components listing) |
| Minimum Operating Temperature | -55 C |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) |
IPB35N10S3L26ATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input (voltage-controlled) |
| Pin 2 | Drain — Drain terminal, electrically connected to the exposed metal tab |
| Pin 3 | Source — Source terminal (return path for gate drive and load current) |
Safe Operating Area (DC)
Typical Applications
IPB35N10S3L26ATMA1 is suitable for 6 applications: 48V Automotive DC-DC Converter, Synchronous Rectification in Telecom Power Supplies, Motor Drive Half-Bridge, Battery Management System (BMS) Load Switch, Solenoid and Relay Driver, Hot-Swap and OR-ing Controller Switch.
48V Automotive DC-DC Converter
The IPB35N10S3L26ATMA1 fits 48V automotive DC-DC converters because its 100 V VDS rating provides 2x headroom over the nominal 48V bus, its 35 A continuous drain current supports multi-kilowatt power levels, and the 80 nC typical gate charge enables switching frequencies above 100 kHz. The OptiMOS-T process minimizes switching losses, critical for fuel-saving mild-hybrid systems where converter efficiency directly impacts CO2 emissions.
Recommended
Synchronous Rectification in Telecom Power Supplies
The IPB35N10S3L26ATMA1 is well-suited as the low-side synchronous rectifier in 48V telecom isolated DC-DC converters (e.g., full-bridge or forward topologies). Its 26.3 mΩ typical RDS(on) reduces conduction losses, while the 80 nC Qg allows low-loss driver operation. According to Infineon OptiMOS-T family benchmarks, the device helps achieve >96% efficiency in 48V-to-PoL converter stages used in server and telecom rectifiers.
Recommended
Motor Drive Half-Bridge
The IPB35N10S3L26ATMA1 serves as the low-side switch in motor drive half-bridges for industrial and e-mobility applications. Its 35 A continuous rating supports small BLDC motors up to ~1.5 kW at 48V, while the 100 V VDS withstands back-EMF transients from inductive loads. The D2PAK package's exposed tab allows direct PCB heatsinking, eliminating external heatsinks in compact motor control PCBAs.
Recommended
Battery Management System (BMS) Load Switch
The IPB35N10S3L26ATMA1 acts as a high-current solid-state relay in BMS precharge and main contactor functions. With 35 A continuous current and 100 V VDS, it directly switches 48V battery rails for pack isolation. The OptiMOS-T body diode is avalanche-rated for safe interruption of inductive battery cable transients, replacing mechanical contactors for higher reliability and silent operation.
Recommended
Solenoid and Relay Driver
The IPB35N10S3L26ATMA1 drives 24V and 48V solenoids in industrial automation and HVAC equipment with high peak current pulses. According to the Infineon OptiMOS-T characterization, the device's 180 A peak capability (from the automotive IPB35N10S3L-26 variant) absorbs the solenoid inrush current with margin. The TO-263 SMD package enables compact PCB integration next to the solenoid connector.
Recommended
Hot-Swap and OR-ing Controller Switch
The IPB35N10S3L26ATMA1 operates as the main pass MOSFET in -48V telecom hot-swap and OR-ing circuits. Its 100 V VDS withstands plug-in transients, while the 26.3 mΩ RDS(on) minimizes voltage drop across the OR-ing FET during normal operation. The D2PAK footprint supports high-density server PSU designs where multiple parallel -48V feeds must be diode-OR'd without excessive dissipation.
Recommended
Recommended Products Summary
Engineering reference data for IPB35N10S3L26ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP320N20N3GXKSA1 | IPB024N10N5ATMA1 | IPD50N04S408ATMA1 | BSC016N06NSTATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) | PG-TO252 (DPAK) | PG-TO263-3 (D2PAK) |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Maximum VDS | 100 V | 200 V | 100 V | 40 V | 60 V |
| Continuous Drain Current (TC) | 35 A | 30 A | [DATA_NEEDED] | 50 A | [DATA_NEEDED] |
| Typical RDS(on) | 26.3 mΩ | [DATA_NEEDED] | 2.4 mΩ | [DATA_NEEDED] | [DATA_NEEDED] |
| Typical Gate Charge Qg | 80 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (TC) | 71 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Process Technology | OptiMOS-T | OptiMOS-3 | OptiMOS-5 | OptiMOS-2 | OptiMOS-5 |
Key Differentiators
- OptiMOS-T technology tuned for low-voltage high-current switching (vs IPP320N20N3GXKSA1)
- Industry-standard D2PAK (PG-TO263-3) footprint (vs IPD50N04S408ATMA1 (DPAK))
- 100 V VDS provides 2x headroom over 48V automotive bus (vs BSZ0901NSIATMA1 (30V))
Design Notes
Estimated: At continuous 35 A drain current with TC = 25 C, the device can dissipate up to 71 W per the Infineon datasheet, but in real applications PCB cooling dominates. Use a minimum 1 sq-in copper pad beneath the D2PAK tab, with thermal vias to inner copper planes, to keep junction temperature below 150 C. Without adequate copper, derate to ~30% of nominal current.
The D2PAK exposed tab is electrically tied to the Drain. The PCB land pattern must isolate the drain pad from source and gate traces, with at least 0.5 mm clearance per IPC-2221 for 100 V applications. Route the gate trace with Kelvin connection to the source to minimize gate-loop inductance and prevent dv/dt-induced parasitic turn-on in half-bridge configurations.
Do not exceed VGS of ±20 V (or per datasheet max); use a gate-source resistor of 10-100 kΩ to prevent floating gate during high dV/dt switching. For half-bridge topologies, add anti-cross-conduction deadtime of at least 100 ns in the gate driver to prevent shoot-through. Verify avalanche rating for inductive loads exceeding the device's pulsed drain current limit.
Compliance Information
AEC-Q101 is the automotive-grade standard for discrete MOSFETs (not AEC-Q100 which is for ICs). The base IPB35N10S3L-26 variant is advertised as automotive-grade per the Infineon product page, but AEC-Q101 qualification status was not confirmed in the verified web data snippets and is marked as [DATA_NEEDED].
