IPD600N25N3GATMA1 vs IPD60R600PFD7SAUMA1 Comparison

Detailed side-by-side comparison of IPD600N25N3GATMA1 by Infineon and IPD60R600PFD7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD600N25N3GATMA1 IPD60R600PFD7SAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.84 $0.45
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 3 —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 250 V —
Continuous Drain Current (ID) at Tc 25 A —
Power Dissipation (PD) at Tc 136 W —
On-Resistance RDS(on) max 60 mOhm at VGS = 10 V —
Gate Threshold Voltage [DATA_NEEDED: VGS(th) typical/min/max] —
Operating Junction Temperature -55 C to +175 C —
Package PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount PG-TO252-3 (DPAK)
Mounting Type Surface Mount (Tape & Reel) Surface Mount
Technology OptiMOS 3 trench MOSFET Superjunction (CoolMOS)
Lead Plating Pb-free —
RoHS Compliance Compliant —
Halogen Free Yes, per IEC 61249-2-21 —
JEDEC Qualification Qualified for target application —
Series — CoolMOS PFD7
Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D) — 6 A (Tc)
R_DS(on) Max — 600 mΩ @ V_GS = 10 V, I_D = 1.7 A
Total Gate Charge (Q_g) — 8.5 nC
Output Capacitance (C_oss) — 8 pF @ 400 V
Power Dissipation (P_D) — 31 W (Tc)
Gate Threshold Voltage (V_GS(th)) — 3.5 V (typ)
Operating Temperature — -55°C to +150°C (Tj)
MSL Level — 1 (per JEDEC J-STD-020)
RoHS Status — Compliant
Reel Quantity — 2500

Datasheets & Resources

Browse All Products Create BOM Request Quote