IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
MPN: IPD60R600PFD7SAUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.74 | $7.40 |
| 100 | $0.61 | $61.00 |
| 500 | $0.52 | $260.00 |
| 1,000 | $0.45 | $450.00 |
IPD60R600PFD7SAUMA1 Overview
What is a superjunction MOSFET? A superjunction MOSFET (also called a CoolMOS™ by Infineon) is a high-voltage power MOSFET that uses a charge-compensation structure (alternating P/N epitaxial columns) instead of the conventional planar or trench drift region. This design simultaneously shrinks the on-resistance per area and improves switching performance, making it superior to standard MOSFETs in the 500V–900V range for offline converters, server PSUs, telecom rectifiers, EV chargers, and industrial motor drives. Within the broader taxonomy, superjunction MOSFETs belong to power MOSFETs -> discrete power semiconductors -> power management.
Key features of the IPD60R600PFD7SAUMA1 include a 600V drain-source voltage rating, continuous drain current of 6 A at T_C, total gate charge of 8.5 nC, output capacitance of 8 pF at 400 V, a 31 W power dissipation rating, and an integrated fast-body diode that supports hard-switched bridge topologies. The part is qualified to the consumer JEDEC moisture sensitivity level and is supplied in tape-and-reel packaging optimized for high-volume SMT lines.
Typical applications include switched-mode power supplies (SMPS), PFC boost stages, LLC half-bridge converters, lighting ballasts, and industrial auxiliary power supplies. The DPAK footprint offers improved thermal coupling to the PCB copper pour versus smaller SOT packages, enabling compact 30–120 W adapters without external heatsinking above moderate ambient temperatures.
A key design consideration is that the R_DS(on) of 600 mΩ makes this part best suited to 600V-class converters at switching frequencies between 65 kHz and 130 kHz; above ~150 kHz the conduction loss becomes a noticeable share of total loss in continuous-conduction PFC. Ensure the gate-drive voltage reaches 10 V for full enhancement and that the layout minimizes the high-side drain loop inductance to avoid dv/dt-induced turn-on.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes (thermal, layout, gate-drive) not found in the manufacturer datasheet alone, providing engineers with a complete decision profile for selecting or replacing the IPD60R600PFD7SAUMA1 in 600V-class power designs.
Drop-in alternatives for IPD60R600PFD7SAUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD60R600PFD7SAUMA1 (same form factor and footprint) — differing in Package, Technology, MSL Level, Operating Temperature Range, Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD60R600PFD7S
✅ Drop-In📋 Reference alternative (not in catalog)
IPD60R600P7S
✅ Drop-In📋 Reference alternative (not in catalog)
IPB60R040CFD7ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$5.19 / Unit
View Datasheet →IPB60R180P7
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IAUCN10S5L280DATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →IPD60R600PFD7SAUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS PFD7 |
| Transistor Type | N-Channel MOSFET |
| Technology | Superjunction (CoolMOS) |
| Drain-Source Voltage (V_DS) | 600 V |
| Continuous Drain Current (I_D) | 6 A (Tc) |
| R_DS(on) Max | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A |
| Total Gate Charge (Q_g) | 8.5 nC |
| Output Capacitance (C_oss) | 8 pF @ 400 V |
| Power Dissipation (P_D) | 31 W (Tc) |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V (typ) |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C to +150°C (Tj) |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Reel Quantity | 2500 |
IPD60R600PFD7SAUMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; standard 10V enhancement drive |
| Pin 2 | Drain — Drain connection (also tied to the back-tab metal) |
| Pin 3 | Source — Source connection; Kelvin-source layout recommended |
| Pin Tab | Drain — Back-tab metal electrically connected to pin 2 (Drain); must be soldered to PCB copper for thermal dissipation |
Safe Operating Area (DC, T_C = 25°C)
Typical Applications
IPD60R600PFD7SAUMA1 is suitable for 6 applications: Off-Line SMPS Adapter (30–120 W), PFC Boost Stage (CCM, up to 150 W), LED Lighting Ballast, Industrial Auxiliary Power Supply, LLC Half-Bridge Resonant Converter, White Goods / Home Appliance Motor Drive.
Off-Line SMPS Adapter (30–120 W)
The IPD60R600PFD7SAUMA1 fits 30–120 W universal-input (90–265 VAC) flyback and quasi-resonant adapters thanks to its 600V V_DS rating, 600 mΩ R_DS(on), and 8.5 nC Q_g. The low gate charge minimizes MOSFET drive loss at 65–130 kHz switching, while the superjunction structure yields clean switching waveforms with controlled dv/dt. Placed on the primary side between the 400V bulk capacitor and the transformer primary, it dissipates typical conduction loss of 0.2–0.4 W at 60 W output. Compared to a 700V/1.5 Ω standard MOSFET, the PFD7 reduces total loss by 25–35% in this power class.
Recommended
PFC Boost Stage (CCM, up to 150 W)
The IPD60R600PFD7SAUMA1 is suitable for continuous-conduction-mode (CCM) PFC boost stages up to ~150 W output. Its 600V rating provides ample headroom above a 400V rectified bus including transients, and the 600 mΩ R_DS(on) keeps conduction loss under 0.5 W at full load in 65 kHz designs. The CoolMOS PFD7 superjunction technology gives low output capacitance (C_oss = 8 pF @ 400V), reducing switching loss during MOSFET turn-on. Designers targeting >200 W PFC should consider the lower-R_DS(on) IPB60R180P7 to improve efficiency.
Recommended
LED Lighting Ballast
The IPD60R600PFD7SAUMA1 is widely used in commercial LED lighting ballasts (10–80 W). The 600V/6A rating covers the rectified mains and PFC bus, and the DPAK package provides good thermal coupling to the metal-core PCB commonly used in luminaires. Low Q_g (8.5 nC) keeps gate-drive loss small at the 50–100 kHz switching frequency typical of LED drivers. The part's integrated body diode supports the hard-commutated transitions in single-stage flyback LED topologies with acceptable reverse-recovery behaviour for the 600V class.
Recommended
Industrial Auxiliary Power Supply
In industrial 24V/48V auxiliary SMPS, the IPD60R600PFD7SAUMA1 serves as the primary-side switch in isolated flyback or forward converters. Its 600V rating survives the rectified 3-phase 400V industrial bus, and the 600 mΩ R_DS(on) plus 8.5 nC Q_g strike a favourable efficiency/price balance for 30–100 W aux supplies. The DPAK footprint enables surface-mount assembly on the same line as low-voltage secondary components, reducing manufacturing cost. Industrial temperature grade (-55°C to +150°C Tj) supports outdoor cabinet and factory-floor deployments.
Recommended
LLC Half-Bridge Resonant Converter
The IPD60R600PFD7SAUMA1 can serve as the low-side switch in 100–300 W LLC half-bridge converters where the operating frequency reaches 100–200 kHz at the resonant tank peak. The 600V rating handles the rectified bus plus resonant overshoot, and the superjunction structure provides low E_oss losses at turn-on. Designers should note that for hard-switched half-bridge applications with significant body-diode stress, the CFD7 family (e.g., IPB60R040CFD7ATMA1) is preferred for its integrated fast-recovery diode.
Recommended
White Goods / Home Appliance Motor Drive
In white goods such as refrigerators, washing machines, and induction cooktops, the IPD60R600PFD7SAUMA1 is used in auxiliary SMPS and PFC front-end stages. Its 600V/6A rating covers the rectified mains, and the DPAK package offers mechanical robustness for the appliance environment. The part's wide operating temperature range (-55°C to +150°C Tj) and JEDEC MSL-1 rating support automated SMT lines typical in high-volume appliance production. Total system cost is reduced versus using a 650V IGBT in this power class.
Recommended
Recommended Products Summary
Engineering reference data for IPD60R600PFD7SAUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD60R600PFD7S | IPD60R600P7S | IPB60R040CFD7ATMA1 | IPB60R180P7 |
|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO263-3 (D2PAK) - NOT drop-in | PG-TO252-3 (DPAK) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
| V_DS (max) | 600 V | 600 V | 600 V | 600 V | |
| I_D (continuous, Tc) | 6 A | 6 A | 6 A | 18 A | |
| R_DS(on) max @ 10V | 600 mΩ | 600 mΩ | 600 mΩ | 180 mΩ | |
| Total Gate Charge (Q_g) | 8.5 nC | 8.5 nC | ~12 nC (P7 gen) | ~25 nC | |
| Output Capacitance (C_oss @ 400V) | 8 pF | 8 pF | ~10 pF | ~45 pF | |
| Power Dissipation (P_D) | 31 W (Tc) | 31 W | 31 W | 83 W | |
| Generation | CoolMOS PFD7 | CoolMOS PFD7 | CoolMOS P7 | CoolMOS P7 |
Key Differentiators
- Lower Q_g and C_oss versus the older P7 generation (vs IPD60R600P7S)
- Higher current rating at lower R_DS(on) versus the target part (vs IPB60R180P7)
- Integrated fast body diode for hard-switched bridge topologies (vs IPB60R040CFD7ATMA1)
Design Notes
Estimated: at 600V/6A with R_DS(on) of 600mΩ and a 70% duty cycle in a CCM PFC, the conduction loss is approximately P = I²·R·D = 6²·0.6·0.7 ≈ 15 W. With a DPAK theta_JA of about 50°C/W on a 1 sq-in copper pour, the junction-to-ambient temperature rise is ~750°C/W × 0.02 (fraction of total P dissipated) ≈ 15°C rise. Designers should verify the actual case-to-ambient thermal resistance against the Infineon datasheet and use a heatsink or larger copper pour above 2W continuous dissipation.
Minimize the high-side drain loop inductance by placing the bulk capacitor, transformer primary, and MOSFET drain terminal within a tight loop. Use a Kelvin-source connection (separate source-sense trace to the controller GND) to avoid gate-drive ringing. The DPAK tab must be soldered to a copper pour of at least 1 square inch; thermal vias under the tab are recommended for double-sided cooling.
Drive the IPD60R600PFD7SAUMA1 with a 10V gate-source voltage for full enhancement and lowest R_DS(on). A gate resistor of 10–47 Ω typically damps the turn-on/turn-off ringing. Ensure the gate-drive IC can source/sink at least 1A peak to charge the 8.5 nC Q_g in <50 ns; use a dedicated gate driver (e.g., 2ED2304S06FXUMA1) when the controller output stage is weak.
Do not exceed V_DS of 600V; the avalanche rating of superjunction MOSFETs is limited compared to older planar parts. Add a snubber (RCD or Zener clamp) across the primary if leakage-inductance spikes exceed 80% of V_DS. Avoid running the part below the minimum specified gate voltage (3.5V threshold) — insufficient drive raises R_DS(on) and can cause thermal runaway.
Compliance Information
RoHS compliant per Infineon product page. Consumer-grade qualification; not AEC-Q100 qualified for automotive. Lead-free reflow profile per JEDEC J-STD-020 MSL-1.
