IPD60R145CFD7ATMA1 vs IPD70R1K4P7SAUMA1 Comparison
Detailed side-by-side comparison of IPD60R145CFD7ATMA1 by Infineon and IPD70R1K4P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 β Active
Specification Comparison
| Parameter | IPD60R145CFD7ATMA1 | IPD70R1K4P7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.52 |
| FET Type | N-Channel | β |
| Technology | CoolMOS CFD7 (superjunction) | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | β |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | β |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | β |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | β |
| Package | TO-252AA (DPAK) surface mount | PG-TO252-3 (DPAK) |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | β |
| Operating Temperature | -55C to +150C (junction) | β |
| Mounting Type | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Series | CoolMOS CFD7 | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | CoolMOS P7 (700V Superjunction) |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 700 V |
| Continuous Drain Current (ID) at Tc=25C | β | 4 A |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V, ID | β | 1.4 ohm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Power Dissipation (Ptot) at Tc=25C | β | 23 W |
| Operating Junction Temperature | β | -55C to +150C |
| Avalanche Energy Rated | β | Yes (100% avalanche tested) |
| ESD Protection | β | Integrated (per datasheet) |