IPD60R145CFD7ATMA1 vs IPD70R1K4P7SAUMA1 Vergleich
Detaillierter Direktvergleich von IPD60R145CFD7ATMA1 von Infineon und IPD70R1K4P7SAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPD60R145CFD7ATMA1 | IPD70R1K4P7SAUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,52 |
| FET Type | N-Channel | — |
| Technology | CoolMOS CFD7 (superjunction) | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | — |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | — |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | — |
| Gehäuse | TO-252AA (DPAK) surface mount | PG-TO252-3 (DPAK) |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | — |
| Betriebstemperatur | -55C to +150C (junction) | — |
| Montageart | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Series | CoolMOS CFD7 | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | CoolMOS P7 (700V Superjunction) |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V, ID | — | 1.4 ohm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Power Dissipation (Ptot) at Tc=25C | — | 23 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (100% avalanche tested) |
| ESD Protection | — | Integrated (per datasheet) |