IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
MPN: IPD60R145CFD7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.18 | $2.18 |
| 10 | $1.92 | $19.20 |
| 100 | $1.65 | $165.00 |
| 500 | $1.42 | $710.00 |
| 1,000 | $1.18 | $1,180.00 |
| 2,500 | $1.05 | $2,625.00 |
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View Datasheet →IPD60R145CFD7ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | CoolMOS CFD7 (superjunction) |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) |
| Package | TO-252AA (DPAK) surface mount |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) |
| Operating Temperature | -55C to +150C (junction) |
| Mounting Type | Surface Mount (DPAK, 3-pin + tab) |
| Pin Count | 3 (Gate, Drain, Source) |
| Series | CoolMOS CFD7 |
| RoHS Status | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching |
IPD60R145CFD7ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (10V typical, threshold ~3.5V) |
| Pin 2 | Drain — Drain (electrically connected to metal tab on back) |
| Pin 3 | Source — Source (low-side reference for gate drive) |
| Pin TAB | Drain — Metal back tab - electrically connected to Drain, used as primary thermal pad and high-voltage creepage surface |
Safe Operating Area (SOA) - TO-252AA (DPAK)
Typical Applications
IPD60R145CFD7ATMA1 is suitable for 6 applications: LLC Resonant Converter (Server / Datacom), Phase-Shift Full-Bridge ZVS Converter (Telecom Rectifier), Totem-Pole PFC (Server / Industrial), Solar Inverter Boost Stage, Industrial SMPS Primary Switch, EV Onboard Charger / Auxiliary SMPS.
LLC Resonant Converter (Server / Datacom)
The IPD60R145CFD7ATMA1 is a primary-side switch choice for 1-3kW LLC resonant converters powering server and datacom rails. Its 600V V<sub>DS</sub> rating comfortably exceeds 400V PFC bulk rail levels, the 145 mOhm R<sub>DS(on)</sub> minimizes conduction loss at full load, and the integrated fast body diode handles ZVS commutation deadtime without shoot-through. Typical switching frequencies are 100-300 kHz.
Recommended
Phase-Shift Full-Bridge ZVS Converter (Telecom Rectifier)
In phase-shift full-bridge (PSFB) telecom rectifier modules the IPD60R145CFD7ATMA1 delivers ZVS operation thanks to its low Q<sub>rr</sub> fast body diode and 145 mOhm R<sub>DS(on)</sub>. The CFD7 platform eliminates the need for an external anti-parallel Schottky and tolerates hard-commutated events on the lagging leg. 48V-output 2-3kW telecom rectifiers are the canonical application, with efficiencies above 96%.
Recommended
Totem-Pole PFC (Server / Industrial)
The IPD60R145CFD7ATMA1 works on the slow (line-frequency-switching) leg of a CCM totem-pole PFC, where its 600V rating and fast body diode minimize reverse-recovery losses. The fast leg should still be implemented with a wide-bandgap device (GaN HEMT or SiC) for maximum efficiency above 65 kHz, but the CFD7 here provides rugged handling of near-hard-commutation events.
Recommended
Solar Inverter Boost Stage
Solar string inverters use the IPD60R145CFD7ATMA1 as the boost switch in DC-DC stages stepping up 80-150V PV strings to a 400V bus, where its 600V V<sub>DS</sub> rating provides ample margin and the 16A continuous drain current handles 2-3 kW per phase. The CFD7 platform's low gate charge reduces drive losses, important for fan-less outdoor inverter designs.
Recommended
Industrial SMPS Primary Switch
General-purpose 500W-2kW industrial SMPS designs use the IPD60R145CFD7ATMA1 as the primary-side switch in flyback, forward, and half-bridge topologies supplied from rectified 230V AC. The 600V V<sub>DS</sub> withstands the 380V DC bus with 1.5x safety margin, and DPAK's 83W power dissipation rating handles continuous operation without external heatsinking.
Recommended
EV Onboard Charger / Auxiliary SMPS
Automotive 6.6-11kW onboard chargers and 12V auxiliary SMPS modules use the IPD60R145CFD7ATMA1 in PFC and LLC primary-side positions where the fast body diode supports ZVS commutation at the resonant tank. The 16A/600V rating fits 3.3kW-6.6kW single-stage chargers, and the CoolMOS CFD7 platform's reduced Q<sub>g</sub> lowers driver losses critical for thermally constrained under-hood designs.
Recommended
Recommended Products Summary
Engineering reference data for IPD60R145CFD7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD60R145CFD7 | IPD60R380C6ATMA1 | IPD60R385CPATMA1 | IPD70R1K4P7SAUMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| V<sub>DS</sub> max | 600 V | 600 V | 600 V | 600 V | 700 V | 800 V |
| R<sub>DS(on)</sub> max | 145 mOhm | 145 mOhm | 380 mOhm | 385 mOhm | 1400 mOhm | 1400 mOhm |
| I<sub>D</sub> continuous (Tc=25C) | 16 A | 16 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | CoolMOS CFD7 (superjunction, fast body diode) | CoolMOS CFD7 - same | CoolMOS C6 | CoolMOS C3 (legacy) | CoolMOS P7 | CoolMOS P7 |
| Fast Body Diode | Yes (low Q<sub>rr</sub>) | Yes - same | Limited | No (legacy C3) | Limited (P7) | Limited (P7) |
| P<sub>D</sub> max | 83 W | 83 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Integrated fast body diode for ZVS/LLC (vs IPD60R385CPATMA1 (CoolMOS C3))
- Lower R<sub>DS(on)</sub> at 600V vs CoolMOS C6 (vs IPD60R380C6ATMA1 (CoolMOS C6))
- 600V exact match - not over-spec'd (vs IPD80R1K4P7ATMA1 (800V P7))
Design Notes
Estimated: at 600V/16A nominal and switching losses ~3W in a ZVS bridge, total dissipation is approximately 2.3W (P = I^2 x R = 16^2 x 0.145 - 100% duty would be 37W, but at 50% duty ~2.3W plus 3W switching). DPAK theta_JC is typically ~1.5C/W, so junction-to-case rise is ~3.5C. With theta_JA ~62C/W on 1oz 1sq-in copper pour, junction-to-ambient rise is ~143C above 25C, which exceeds 150C max junction. Use at least 4 sq-in copper pour or an external heatsink for sustained 16A operation.
Keep the high-current loop (drain tab - tab copper - source return - source pin) as small and tight as possible to minimize parasitic inductance. The DPAK tab is electrically connected to the drain and must NOT be soldered to the source-ground copper plane; route the drain tab copper to the high-voltage rail only. Provide at least 1mm creepage distance from the tab to any low-voltage trace. A 4-layer PCB with dedicated power and ground planes is strongly recommended above 2kW switching power.
Do not exceed V<sub>DS</sub>=600V - the avalanche rating is for transient clamping only, not continuous overvoltage. The gate-source voltage must remain within +/-20V; gate-source over-voltage is a common failure mode caused by gate-driver supply transients. Add a 10kOhm gate-source resistor to ensure the MOSFET is held off during driver power-up. Do not exceed 150C junction temperature; thermal runaway can occur in DPAK packages above this threshold.
Drive the gate with at least +10V V<sub>GS</sub> for full R<sub>DS(on)</sub> enhancement; +12V is recommended to minimize conduction loss. Use a dedicated gate-drive supply (isolated DC-DC or bootstrap) rather than pulling from V<sub>DD</sub> logic rails, which may not reach 10V under load. A gate resistor in the 10-47 Ohm range provides a good compromise between switching speed and dv/dt-induced ringing; reduce if ringing is well-controlled, increase if EMI is excessive.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - the IPD60R145CFD7ATMA1 is targeted at industrial SMPS, telecom, server/datacom, and solar inverter applications, not automotive. Halogen-free per Infineon policy.
