IPD60R360P7SAUMA1 vs IPD80R600P7ATMA1 Comparison
Detailed side-by-side comparison of IPD60R360P7SAUMA1 by Infineon and IPD80R600P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD60R360P7SAUMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Series | CoolMOS P7 | β |
| Technology | Superjunction (SJ) N-Channel MOSFET | CoolMOS P7 super-junction |
| Drain-Source Voltage (VDS) | 600 V | 800 V |
| Continuous Drain Current (ID) at TC | 9 A | β |
| Static Drain-Source On-Resistance (RDS(on)) | 360 mOhm (typ, VGS = 10 V) | β |
| Power Dissipation (PD) at TC | 41 W | β |
| Gate-Source Threshold Voltage (VGS(th)) | 3.0 V to 4.5 V (typ) | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Package / Case | PG-TO252-3 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | β |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +150 C |
| RoHS Status | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Channel Type | N-Channel | β |
| Continuous Drain Current (ID, Tc) | β | 8 A |
| Pulsed Drain Current (IDM) | β | 22 A |
| On-Resistance (RDS(on), max) | β | 600 mΞ© at VGS=10V |
| Maximum Power Dissipation (Ptot) | β | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | β | Β±30 V |
| Avalanche Energy, Single Pulse (EAS) | β | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | β | 0.17 mJ |
| Package | β | PG-TO252-3 (DPAK) |
| Polarity | β | N-Channel |