IPD60R360P7SAUMA1 vs IPD80R600P7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R360P7SAUMA1 sa pamamagitan ng Infineon at IPD80R600P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon
IPD60R360P7SAUMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPD60R360P7SAUMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | CoolMOS P7 super-junction |
| Drain-Source Voltage (VDS) | 600 V | 800 V |
| Continuous Drain Current (ID) at TC | 9 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 360 mOhm (typ, VGS = 10 V) | — |
| Power Dissipation (PD) at TC | 41 W | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.0 V to 4.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Packhaging / Kaso | PG-TO252-3 (DPAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 3 | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55 C to +150 C |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Channel Type | N-Channel | — |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Packhaging | — | PG-TO252-3 (DPAK) |
| Polarity | — | N-Channel |