IPD80R280P7ATMA1 vs IPD80R600P7ATMA1 Comparison
Detailed side-by-side comparison of IPD80R280P7ATMA1 by Infineon and IPD80R600P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD80R280P7ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Product Family | CoolMOS P7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | Superjunction (CoolMOS P7) | CoolMOS P7 super-junction |
| Drain-Source Voltage (V_DS) | 800 V | β |
| Continuous Drain Current (I_D, Tc) | 17 A | β |
| R_DS(on) max at V_GS=10V | 280 mOhm | β |
| Power Dissipation (P_D, Tc) | 101 W | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | β |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55C to +150C | β |
| ESD Protection | Integrated (per datasheet) | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | β | 800 V |
| Continuous Drain Current (ID, Tc) | β | 8 A |
| Pulsed Drain Current (IDM) | β | 22 A |
| On-Resistance (RDS(on), max) | β | 600 mΞ© at VGS=10V |
| Maximum Power Dissipation (Ptot) | β | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | β | Β±30 V |
| Avalanche Energy, Single Pulse (EAS) | β | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | β | 0.17 mJ |
| Operating Temperature Range | β | -55 C to +150 C |
| Polarity | β | N-Channel |