IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon
MPN: IPD80R280P7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.85 | $925.00 |
| 1,000 | $1.62 | $1,620.00 |
IPD80R280P7ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch and condition power in DC-DC converters, AC-DC power supplies, motor drives, and load management circuits. Within the broader taxonomy, MOSFETs sit under discrete semiconductors and subdivide into N-channel and P-channel, enhancement-mode and depletion-mode, with superjunction (a.k.a. CoolMOS) devices representing the high-voltage-optimized branch that combines low R_DS(on) with low switching losses.
Key differentiating specifications include 800V drain-source breakdown voltage, a typical R_DS(on) of 280 mOhm at V_GS=10V, integrated ESD protection diode, and a dv/dt ruggedness profile suited to hard-switched PFC and flyback topologies. The P7 generation reduces gate charge (Q_G) and output capacitance (C_oss) versus the prior P6 series, which directly lowers switching losses in high-frequency SMPS stages.
The CoolMOS P7 superjunction architecture replaces the conventional planar DMOS cell with a vertical column of alternating p-n layers, dramatically shrinking on-resistance per unit area while preserving high blocking voltage. This makes the IPD80R280P7ATMA1 a strong fit where thermal headroom, conduction loss, and ease of driving must be balanced against cost.
Typical applications include PFC boost stages in 600-800V class switch-mode power supplies, LLC and flyback primary switches in LED drivers and TV power, industrial SMPS for factory automation, solar inverter auxiliary rails, and 380-400V motor drive half-bridges. The PG-TO252-3 footprint is also widely accepted as a drop-in DPAK land pattern.
When designing with this part, observe the SOA in the manufacturer datasheet, keep the gate-drive loop tight to suppress ringing, and choose a TVS across drain-source when the application stresses inductive turn-off. Below-source-threshold V_GS must be respected to avoid parasitic turn-on in half-bridge layouts.
This page consolidates Infineon datasheet specifications, current distributor pricing from DigiKey and Mouser, drop-in alternatives in PG-TO252-3, and practical design notes not always visible on catalog listings.
Drop-in alternatives for IPD80R280P7ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD80R280P7ATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, Product Family, MSL Level.
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View Datasheet →IPD80R280P7ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS P7 |
| Transistor Type | N-Channel MOSFET |
| Technology | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (V_DS) | 800 V |
| Continuous Drain Current (I_D, Tc) | 17 A |
| R_DS(on) max at V_GS=10V | 280 mOhm |
| Power Dissipation (P_D, Tc) | 101 W |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Operating Junction Temperature | -55C to +150C |
| ESD Protection | Integrated (per datasheet) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IPD80R280P7ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; standard V_GS(th) around 3-4V, full enhancement at 10V |
| Pin 2 | Drain — Power drain; internally bonded to the metal tab and thermal pad |
| Pin 3 | Source — Source return; Kelvin source recommended for high-frequency gate drive |
Safe Operating Area (Tc=25C, DC)
Typical Applications
IPD80R280P7ATMA1 is suitable for 6 applications: PFC Boost Stage in 230VAC SMPS, LLC Resonant Primary Switch in LED TV Power, Flyback Primary Switch in Industrial SMPS, Solar Inverter Auxiliary Rail Switch, LED Driver Primary Switch, 380VAC Industrial Motor Drive Auxiliary.
PFC Boost Stage in 230VAC SMPS
The IPD80R280P7ATMA1 is well-suited for the active switch in CCM/DCM PFC boost converters operating from 230VAC rectified input. Its 800V drain-source rating comfortably handles the 325V rectified peak plus switching overshoot and inductive transients, leaving a >2x safety margin versus 600V alternatives. The 280 mOhm R_DS(on) at V_GS=10V keeps conduction loss moderate in 100-200W PFC stages, while the CoolMOS P7 superjunction architecture reduces Q_G and E_oss, lowering switching loss at 65-130kHz operation. Placed between the bridge rectifier and boost inductor, it works with standard UCC28180 or NCP1654 controllers. Designers should prioritize tight gate-drive loop layout to limit ringing at turn-off. Estimated at 200W PFC, total MOSFET loss is around 3-4W, manageable on a 1 sq-inch DPAK copper pad.
Recommended
LLC Resonant Primary Switch in LED TV Power
The IPD80R280P7ATMA1 works effectively as the primary-side MOSFET in half-bridge LLC resonant converters for 100-300W LED TV and adapter power supplies. The CoolMOS P7 superjunction technology delivers low C_oss and Q_G versus planar 800V MOSFETs, which directly reduces the magnetizing current and circulating energy in the resonant tank. This enables higher switching frequencies (100-200kHz) and smaller magnetics. With a 400V rectified bus and 800V rating, the part tolerates start-up transients and LLC overshoot at the secondary-rectifier commutation. In a typical 150W LLC design, two IPD80R280P7ATMA1 parts share the half-bridge with a 1:1 LLC transformer. The DPAK package handles the ~2-3W per-device dissipation comfortably on standard PCB copper.
Recommended
Flyback Primary Switch in Industrial SMPS
The IPD80R280P7ATMA1 functions well as the primary switch in quasi-resonant and hard-switched flyback converters used in 24V/48V industrial power supplies. Its 800V breakdown supports wide-range 85-305VAC inputs, eliminating the need for separate high-line and low-line MOSFET variants and simplifying BOM. The 280 mOhm on-resistance balances conduction and switching losses in 50-100W flyback stages. Integrated ESD protection improves field reliability against handling and hot-plug transients. Placed between bulk capacitor and transformer primary, it is driven by controllers such as ICE2QR2280Z or NCP1337. Estimated flyback loss at 90VAC low-line full load is approximately 1.5-2W, easily handled by the 101W Tc-rated DPAK package on a properly sized thermal pad.
Recommended
Solar Inverter Auxiliary Rail Switch
The IPD80R280P7ATMA1 is a reasonable choice for auxiliary and gate-driver power supply rails in 600-1500V solar string inverters. The 800V rating withstands harsh DC bus transients in photovoltaic installations, including load-dump and grid-disconnect events. The 17A continuous drain current and 101W power dissipation in DPAK enable small auxiliary flyback or buck converters to operate reliably across the wide temperature range of outdoor enclosures (-40C to +125C ambient). Integrated ESD diode improves robustness in the field. The DPAK footprint also helps standardization across product families. Consider adding a TVS diode across drain-source for lightning-induced surge events in exposed rooftop installations.
Recommended
LED Driver Primary Switch
The IPD80R280P7ATMA1 operates effectively as the primary MOSFET in isolated and non-isolated LED drivers for industrial high-bay and street-lighting applications. The 800V rating supports universal 120-277VAC and 347VAC input designs, simplifying global SKUs. CoolMOS P7 efficiency improvement versus P6 saves ~0.5W per MOSFET at 100W LED driver loading, reducing fixture thermal rise and extending LED lifetime. With 280 mOhm R_DS(on), conduction loss is acceptable for 50-150W driver designs. DPAK package fits standard through-hole-replacement form factors. Place heatsink copper pour under tab for reliable thermal performance; target theta_JA below 50 C/W via 1 sq-inch copper for 2W dissipation.
Recommended
380VAC Industrial Motor Drive Auxiliary
The IPD80R280P7ATMA1 is suited for low-power auxiliary supplies in 380-400VAC three-phase motor drives (VFDs, servo amplifiers). Its 800V breakdown tolerates 565V rectified bus with >1.4x safety margin, supporting common 480VAC industrial mains worldwide. The integrated ESD protection improves reliability in electrically noisy motor-control cabinets where switching transients are common. At 280 mOhm R_DS(on), the part is optimal for 30-80W auxiliary flyback designs powering gate drivers and housekeeping circuits. DPAK package with copper-pour heatsinking handles 1-2W auxiliary dissipation comfortably. Add Y-cap and common-mode filtering to the input for industrial EMC compliance with IEC 61800-3.
Recommended
Recommended Products Summary
Engineering reference data for IPD80R280P7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD80R600P7ATMA1 | IPB60R280P7ATMA1 | IPB60R040CFD7ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (V_DS) | 800 V | 800 V - same | 600 V (-25%) | 600 V (-25%) | 40 V (low-voltage class) |
| R_DS(on) max at V_GS=10V | 280 mOhm | 600 mOhm (+114%) | 280 mOhm - same | 4.0 mOhm (much lower) | 1.1 mOhm (much lower) |
| Technology Family | CoolMOS P7 (superjunction) | CoolMOS P7 - same | CoolMOS P7 - same | CoolMOS CFD7 | OptiMOS 7 |
| ESD Protection | Integrated | Integrated | Integrated | Integrated | Integrated |
| Unit Price @ qty-1 (USD, 2026-09-15) | ~$2.85 | ~$1.90 (cheaper) | ~$3.20 | ~$4.50 | ~$1.10 (low-voltage class) |
Key Differentiators
- Same voltage rating, 2x lower R_DS(on) than 600 mOhm P7 family member (vs IPD80R600P7ATMA1)
- 800V breakdown supports universal 230-380VAC inputs (vs IPB60R280P7ATMA1)
- CoolMOS P7 superjunction reduces switching loss versus planar MOSFETs (vs Standard 800V planar MOSFET)
Design Notes
Estimated: At continuous 10A drain current and 280 mOhm R_DS(on) at 25C, conduction loss is approximately 28W, which exceeds the 101W Tc-rated power dissipation only at elevated junction temperatures. Provide a copper-pour heatsink of at least 1 sq-inch on the DPAK tab to achieve theta_JA near 50 C/W. For high-power designs where R_DS(on) at 125C (~1.6x room-temperature value) must be accounted for, derate to 7-8A continuous per device to keep junction temperature below 125C.
Keep the gate-drive loop as tight as physically possible: place the gate resistor and any local gate-source capacitance directly between the gate pin and source pin. Use a Kelvin source connection if available, or minimize source-inductance by routing the gate-drive return directly to the source pin rather than to the power ground plane. Source inductance of 5nH can produce overshoot ringing of 25V at 5A/ns switching edge, potentially exceeding V_GS(max). Add a 10-22 ohm gate resistor to dampen the LC tank.
Do not exceed the absolute maximum V_GS rating, which is typically +/-20V for CoolMOS P7. Transients from drain-source dv/dt coupling through C_GD can drive the gate above threshold; ensure gate-drive ICs have well-regulated supply. Below the gate-threshold voltage (typically 3-4V), the MOSFET must remain fully off to avoid shoot-through in half-bridge topologies. For 800V applications, verify controller UVLO and start-up behavior are compatible with the CoolMOS P7 gate-charge profile.
To minimize EMI in hard-switched PFC and flyback topologies, use a ferrite bead on the gate or a slow gate-drive edge (~50-100ns turn-off) to reduce dv/dt-induced ringing. Adding a small RC snubber (10-47 ohm + 100-470pF) across drain-source can damp high-frequency ringing at turn-off, reducing both EMI and peak voltage stress. For PFC applications, follow Infineon application note AN-PFC-CoolMOS-P7 layout recommendations for lowest common-mode emissions.
Compliance Information
RoHS and REACH compliant per Infineon product page. Industrial-grade (not automotive AEC-Q100 qualified). Lead-free and halogen-free. Conflict-minerals declaration compliant per Infineon supply-chain policy.
