IPG20N10S4L22AATMA1 vs IPB35N10S3L26ATMA1 Comparison
Detailed side-by-side comparison of IPG20N10S4L22AATMA1 by Infineon and IPB35N10S3L26ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΞ© MOSFET | Infineon
IPG20N10S4L22AATMA1 β ActiveInfineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 β ActiveSpecification Comparison
| Parameter | IPG20N10S4L22AATMA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.45 | $1.15 |
| FET Type | Dual N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 20 A | β |
| On-State Resistance (R<sub>DS(on)</sub>) | 22 mΞ© (typical) | β |
| Power Dissipation (P<sub>D</sub>) | 60 W | β |
| Gate-Source Voltage (V<sub>GS</sub>) | Β±20 V | β |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th)] | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-TDSON-8-10 (Wettable Flank) | β |
| Lead Configuration | Wettable Flank | β |
| Automotive Qualification | AEC-Q101 | β |
| Technology | OptiMOS T2 | β |
| Operating Temperature | -55Β°C to +175Β°C | β |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Channel Count | 2 (dual independent) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-T |
| Channel Type | β | N-Channel |
| Maximum Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC | β | 35 A |
| Power Dissipation (PD) at TC | β | 71 W |
| Package Type | β | PG-TO263-3 (D2PAK-2) |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Channel Mode | β | Enhancement |
| RDS(on) (typical per Infineon product page) | β | 26.3 mΞ© |
| Typical Gate Charge Qg @ Vgs | β | 80 nC |
| Maximum Drain-Source Resistance Rds | β | 1.7 mΞ© (per RS Components listing) |
| Minimum Operating Temperature | β | -55 C |
| Maximum Power Dissipation Pd | β | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | β | [DATA_NEEDED: AEC-Q101 qualification status] |