IPG20N10S4L35ATMA1 vs IPG20N06S2L65ATMA1 Comparison
Detailed side-by-side comparison of IPG20N10S4L35ATMA1 by Infineon and IPG20N06S2L65ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPG20N10S4L35ATMA1 | IPG20N06S2L65ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPG20N10S4L35ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | Dual N-Channel, Logic Level |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | 20 A | — |
| R<sub>DS(on)</sub> Max | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: typical Vgs(th) value] | — |
| Power Dissipation (P<sub>D</sub>) | 43 W | — |
| Operating Temperature | 175°C max junction | — |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PG-TDSON-8-4 (8-Pin TDSON EP) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 Qualified |
| MSL Level | MSL1 (up to 260°C peak reflow) | MSL1 (260°C peak reflow) |
| Series | OptiMOS™, Automotive | — |
| RoHS Status | Compliant (Green Product) | — |
| Avalanche Rated | 100% Avalanche Tested | — |
| Technology | — | OptiMOS-T2 (Planar Trench 55V) |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A per channel |
| RDS(on) at VGS=10V | — | 65 mΩ typical |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic level) |
| Total Power Dissipation (Ptot) | — | 43 W |
| Operating Temperature Range | — | -55°C to +175°C |
| Package | — | PG-TDSON-8-4 (TDSON-8 EP) |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS Compliance | — | RoHS Compliant (Green Product) |
| Packaging | — | Tape & Reel (TMA1 suffix) |