IPL60R085P7AUMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPL60R085P7AUMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R085P7AUMA1
IPL60R085P7AUMA1 - 600V 85mΞ© CoolMOS P7 MOSFET | Infineon
IPL60R085P7AUMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IPL60R085P7AUMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.65 | $0.82 |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 39 A | β |
| Continuous Drain Current (ID, Tc=100Β°C) | 24 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Static Drain-Source On-Resistance (RDS(on)) | 85 mΞ© at VGS=10 V | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | 4 V (max, typical) |
| Maximum Power Dissipation (Ptot) | 154 W | β |
| Operating Junction Temperature | -40 Β°C to +150 Β°C | -55 C to +175 C |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| ESD Robustness (HBM) | >2 kV (all pins) | β |
| Technology | CoolMOS P7 superjunction (7th generation) | Trench MOSFET (OptiMOS 3) |
| Package | PG-VSON-4 (VSON-4, source-down) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | β |
| Polarity | N-channel | β |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |