IPL60R085P7AUMA1 vs BSC076N04NDATMA1 比較
詳細並排比較 IPL60R085P7AUMA1 由 Infineon 與 BSC076N04NDATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPL60R085P7AUMA1 | BSC076N04NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 39 A | — |
| Continuous Drain Current (ID, Tc=100°C) | 24 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 85 mΩ at VGS=10 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | 4 V (max, typical) |
| Maximum Power Dissipation (Ptot) | 154 W | — |
| 工作接面溫度 | -40 °C to +150 °C | -55 C to +175 C |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| ESD Robustness (HBM) | >2 kV (all pins) | — |
| Technology | CoolMOS P7 superjunction (7th generation) | Trench MOSFET (OptiMOS 3) |
| 封裝 | PG-VSON-4 (VSON-4, source-down) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | — |
| Polarity | N-channel | — |
| RoHS 狀態 | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| 封裝 / 外殼 | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |