IPLU300N04S41R1XTMA1 vs IAUC60N06S5L073ATMA1 Comparison
Detailed side-by-side comparison of IPLU300N04S41R1XTMA1 by Infineon and IAUC60N06S5L073ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPLU300N04S41R1XTMA1
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΞ© Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 β ActiveInfineon
IAUC60N06S5L073ATMA1
IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
IAUC60N06S5L073ATMA1 β ActiveSpecification Comparison
| Parameter | IPLU300N04S41R1XTMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.45 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPLU300N04S41R1XTMA1 | β |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS (Trench MOSFET) | Trench (OptiMOS 5) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 300 A | β |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25Β°C) | 300 W | β |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | 1.15 mΞ© | β |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | 151 nC | β |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | 12,090 pF | β |
| Gate-Source Voltage (V<sub>GS</sub>) | Β±20 V | β |
| Operating Junction Temperature | 175 Β°C | β |
| Peak Reflow Temperature (AEC-Q) | 260 Β°C | β |
| Package | PG-HSOF-8-1 (8-PowerSFN, surface mount) | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rating | 100% Avalanche Tested | β |
| RoHS Compliance | Yes (Green Product) | β |
| Lead-Free | Yes (100% lead-free) | β |
| Configuration | Single with built-in diode | Single N-Channel |
| Packing | Tape & Reel (TR) | β |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tj | β | 60 A |
| On-Resistance RDS(on) max | β | 7.3 mΞ© |
| Total Gate Charge (QG) | β | 17.4 nC |
| Power Dissipation (PD) at Tc | β | 52 W |
| Operating Temperature Range | β | -55C to +175C |
| Number of Pins | β | 8 |
| Qualification | β | AEC-Q101 automotive grade |
| RoHS Status | β | Compliant |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RΞΈJA | β | [DATA_NEEDED: thermal resistance junction-to-ambient] |