IPLU300N04S41R1XTMA1 vs IAUC60N06S5L073ATMA1 Comparación
Comparación detallada lado a lado de IPLU300N04S41R1XTMA1 por Infineon y IAUC60N06S5L073ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPLU300N04S41R1XTMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,45 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPLU300N04S41R1XTMA1 | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS (Trench MOSFET) | Trench (OptiMOS 5) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 300 A | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 300 W | — |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | 1.15 mΩ | — |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | 151 nC | — |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | 12,090 pF | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Temperatura de unión de funcionamiento | 175 °C | — |
| Peak Reflow Temperature (AEC-Q) | 260 °C | — |
| Encapsulado | PG-HSOF-8-1 (8-PowerSFN, surface mount) | PG-TDSON-8-33 (5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS Compliance | Yes (Green Product) | — |
| Lead-Free | Yes (100% lead-free) | — |
| Configuration | Single with built-in diode | Single N-Channel |
| Packing | Tape & Reel (TR) | — |
| Series | — | OptiMOS 5 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tj | — | 60 A |
| On-Resistance RDS(on) max | — | 7.3 mΩ |
| Total Gate Charge (QG) | — | 17.4 nC |
| Power Dissipation (PD) at Tc | — | 52 W |
| Rango de temperatura de funcionamiento | — | -55C to +175C |
| Número de pines | — | 8 |
| Qualification | — | AEC-Q101 automotive grade |
| Estado RoHS | — | Compliant |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: thermal resistance junction-to-ambient] |