IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
MPN: IPLU300N04S41R1XTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.42 | $5.42 |
| 10 | $4.89 | $48.90 |
| 100 | $4.21 | $421.00 |
| 500 | $3.78 | $1,890.00 |
| 1,000 | $3.45 | $3,450.00 |
IPLU300N04S41R1XTMA1 Overview
What is an automotive power MOSFET? An automotive power MOSFET is a specialized N-channel enhancement-mode field-effect transistor designed and qualified to withstand the harsh electrical, thermal, and mechanical stresses of vehicle environments - including load-dump transients, wide temperature swings, and long-term vibration. It belongs to the broader semiconductor taxonomy of discrete transistor -> MOSFET -> power MOSFET -> automotive-grade MOSFET, and serves as the high-current switching element in 12 V/24 V vehicle electrical systems where efficiency, thermal robustness, and AEC-Q reliability are non-negotiable.
Key features include AEC-Q qualification with peak reflow of 260°C and operating junction temperature of 175°C, RoHS-compliant lead-free construction, 100% avalanche-tested ruggedness, and a logic-level-compatible ±20 V gate-source rating. The PG-HSOF-8-1 package uses an exposed thermal pad that minimizes R<sub>thJC</sub> and enables direct PCB cooling without a discrete heatsink in many high-current loops. The integrated body diode simplifies half-bridge and OR-ing topologies by eliminating the need for an external freewheeling device in synchronous-rectification reverse-current paths.
Architecturally, the IPLU300N04S4-1R1 cell uses Infineon's OptiMOS technology platform, which optimizes the silicon trade-off between R<sub>DS(on)</sub>, gate charge Q<sub>g</sub>, and output charge Q<sub>oss</sub> for high-current switching. The cell pitch and trench geometry are tuned for 12 V/24 V automotive bus rails, where the part delivers industry-leading figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) for conduction and switching losses at 300 A peak. This makes the device particularly well-suited to high-frequency PWM-driven power converters used in mild-hybrid and electric-vehicle subsystems.
Typical applications include 12 V/24 V automotive load switching and high-side drivers, electric power steering (EPS) controllers, battery management system (BMS) protection and disconnect switches, DC-DC converter high-side switches, and motor-drive half-bridges. The 300 A continuous rating supports high-current starter-generator and traction inverter auxiliary rails that must operate reliably at 175°C junction temperature throughout the vehicle lifetime.
When designing with this part, prioritize low-inductance PCB layout - the PG-HSOF-8-1 source-connected thermal pad must be soldered to a continuous copper pour to extract heat. The ±20 V V<sub>GS</sub> rating requires a gate driver with controlled slew rate to prevent ringing and dv/dt-induced false turn-on in half-bridge topologies. Always derate continuous current to 50-60% of the datasheet maximum in sealed enclosures.
This page synthesizes distributor pricing, drop-in alternatives, and practical thermal design notes not found in the manufacturer datasheet, providing engineering decision support for procurement and PCB redesign workflows.
Drop-in alternatives for IPLU300N04S41R1XTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPLU300N04S41R1XTMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Configuration, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC100N04S6N028ATMA1
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View Datasheet →IPLU300N04S41R1XTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPLU300N04S41R1XTMA1 |
| FET Type | N-Channel, Enhancement Mode |
| Technology | OptiMOS (Trench MOSFET) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 300 A |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 300 W |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | 1.15 mΩ |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | 151 nC |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | 12,090 pF |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V |
| Operating Junction Temperature | 175 °C |
| Peak Reflow Temperature (AEC-Q) | 260 °C |
| Package | PG-HSOF-8-1 (8-PowerSFN, surface mount) |
| Mounting Type | Surface Mount |
| Avalanche Rating | 100% Avalanche Tested |
| RoHS Compliance | Yes (Green Product) |
| Lead-Free | Yes (100% lead-free) |
| Configuration | Single with built-in diode |
| Packing | Tape & Reel (TR) |
IPLU300N04S41R1XTMA1 Pin Configuration
| Pin 1 | G — Gate - gate drive input, ±20V V<sub>GS</sub> maximum |
| Pin 2 | S — Source - power return path |
| Pin 3 | S — Source - power return path |
| Pin 4 | S — Source - power return path |
| Pin 5 | S — Source - power return path |
| Pin 6 | S — Source - power return path |
| Pin 7 | S — Source - power return path |
| Pin 8 | S — Source - power return path |
| Pin TAB | D — Drain - central exposed thermal pad, drain terminal, also serves as primary thermal dissipation path |
Safe Operating Area (DC, T<sub>C</sub>=25°C)
Typical Applications
IPLU300N04S41R1XTMA1 is suitable for 6 applications: 12V/24V Automotive Load Switching, Electric Power Steering (EPS) Controllers, Battery Management System (BMS) Disconnect Switch, 48V Mild-Hybrid DC-DC Converter High-Side Switch, Industrial Motor Drive Half-Bridge, Telecom and Server Hot-Swap / OR-ing Controller.
12V/24V Automotive Load Switching
The IPLU300N04S41R1XTMA1 is well-suited for high-side and low-side load switching in 12 V and 24 V automotive body and chassis subsystems. With 40 V V<sub>DS</sub> rating providing load-dump headroom and 300 A continuous current capacity, the device handles power-hungry loads such as PTC heaters, headlamp drivers, and seat heaters. The 1.15 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V keeps conduction losses under 5 W even at 100 A loads, eliminating the need for parallel MOSFETs. AEC-Q qualification with 175°C junction rating supports under-hood deployment. Compared with mechanical relays, this part delivers PWM-controlled soft-start, current limiting, and diagnostic feedback without contact wear.
Recommended
Electric Power Steering (EPS) Controllers
Electric power steering systems require high-current MOSFETs to drive the BLDC motor that provides steering assist. The IPLU300N04S41R1XTMA1's 300 A rating supports the peak torque demands of EPS motors during parking maneuvers, while its 1.15 mΩ R<sub>DS(on)</sub> minimizes I²R heating during continuous highway driving. The OptiMOS technology's low Q<sub>g</sub> of 151 nC enables fast PWM switching at 20-50 kHz, reducing torque ripple and audible noise in the steering column. AEC-Q qualification to 175°C supports the harsh thermal environment of the EPS unit mounted near the engine bay. The PG-HSOF-8-1 exposed thermal pad attaches directly to the chassis heatsink for passive cooling.
Recommended
Battery Management System (BMS) Disconnect Switch
In lithium-ion battery management systems, the IPLU300N04S41R1XTMA1 serves as the main contactor or disconnect switch for 12 V/48 V mild-hybrid batteries. The 300 A continuous rating handles inrush currents during precharge and normal charge/discharge cycles. The 40 V V<sub>DS</sub> rating accommodates transient overvoltages during load-dump events on 12 V systems or inductive kickback from the contactor coil. With 1.15 mΩ R<sub>DS(on)</sub>, voltage drop across the MOSFET is only 115 mV at 100 A, well below the contactor threshold. AEC-Q and 175°C junction temperature ensure long-term reliability across the vehicle lifetime.
Recommended
48V Mild-Hybrid DC-DC Converter High-Side Switch
48 V mild-hybrid vehicles use bidirectional DC-DC converters between the 48 V and 12 V buses, with switching frequencies of 100-200 kHz. The IPLU300N04S41R1XTMA1's 151 nC total gate charge enables fast switching transitions, while its ultra-low 1.15 mΩ R<sub>DS(on)</sub> minimizes conduction loss in the high-current path between the 48 V battery and the 12 V battery buffer. The PG-HSOF-8-1 package's low thermal resistance supports sustained 200+ A operation. The 40 V V<sub>DS</sub> rating provides comfortable margin for 48 V bus transients, though designers should verify against the specific ISO 21780 transient envelope.
Recommended
Industrial Motor Drive Half-Bridge
Outside of automotive, the IPLU300N04S41R1XTMA1 serves industrial motor drive half-bridges controlling BLDC and PMSM motors up to 10 kW. The 300 A continuous rating covers peak motor currents, while the integrated body diode provides freewheeling current path during PWM dead-time intervals. The 1.15 mΩ R<sub>DS(on)</sub> at 10 V V<sub>GS</sub> matches common 12 V and 24 V industrial DC bus architectures. The PG-HSOF-8-1 exposed thermal pad supports direct chassis mounting for fan-less industrial equipment. Note that industrial applications typically operate at lower ambient temperatures than automotive, making this part suitable for higher continuous loads in indoor enclosures.
Recommended
Telecom and Server Hot-Swap / OR-ing Controller
In 48 V telecom and hyperscale data center power architectures, the IPLU300N04S41R1XTMA1 functions as an OR-ing MOSFET or hot-swap controller switching element. The 40 V V<sub>DS</sub> rating fits 48 V nominal bus rails with transient margin, while the 1.15 mΩ R<sub>DS(on)</sub> minimizes forward-conduction loss - critical for high-current distribution where every milliohm matters. The 300 A continuous rating supports high-power server shelves drawing 5-10 kW per feed. Infineon's OptiMOS technology provides low Q<sub>oss</sub> for fast turn-off during fault isolation, and the PG-HSOF-8-1 package handles high inrush currents without thermal shutdown.
Recommended
Recommended Products Summary
Engineering reference data for IPLU300N04S41R1XTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC100N04S6N028ATMA1 | IAUC100N04S6N015ATMA1 | IAUC60N06S5L073ATMA1 | ISC011N06LM5ATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) |
| Package | PG-HSOF-8-1 (8-PowerSFN) | PG-HSOF-8-1 (same) | PG-HSOF-8-1 (same) | PG-HSOF-8-1 (same) | PG-HSOF-8-1 (same) | PG-HSOF-8-1 (same) |
| V<sub>DS</sub> Max | 40 V | 40 V (same) | 40 V (same) | 60 V (higher) | 60 V (higher) | 100 V (higher) |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10V) | 1.15 mΩ | 0.28 mΩ (lower) | 0.15 mΩ (lower) | 0.73 mΩ (lower) | 1.1 mΩ (similar) | 9.8 mΩ (higher) |
| AEC-Q Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Technology | OptiMOS (Trench) | OptiMOS (same) | OptiMOS (same) | OptiMOS (same) | OptiMOS (same) | OptiMOS (same) |
Key Differentiators
- Ultra-low 1.15 mΩ R<sub>DS(on)</sub> in PG-HSOF-8-1 with 300 A continuous current (vs BSC014N04LSTATMA1)
- AEC-Q qualified to 175°C with 100% avalanche testing (vs IAUC100N04S6N028ATMA1)
- 40 V V<sub>DS</sub> rating specifically tuned for 12V/24V automotive bus rails (vs ISC011N06LM5ATMA1)
Design Notes
Estimated: at full 300 A continuous load, conduction loss is P=I²×R = 300²×0.00115 ≈ 103 W. The PG-HSOF-8-1 package thermal resistance R<sub>thJC</sub> is approximately 0.4 °C/W, but total junction-to-ambient R<sub>thJA</sub> depends heavily on PCB copper area and via design. For 300 A operation, mount the exposed drain tab onto at least 2-3 square inches of continuous 2 oz copper with thermal via arrays to inner-layer copper planes. Without aggressive thermal design, junction temperature will exceed 175°C at full load. Always cross-check the Infineon SOA curves against your specific T<sub>A</sub> and pulse profile before finalizing the design.
The PG-HSOF-8-1 (8-PowerSFN) package requires careful PCB layout to minimize parasitic inductance and maximize thermal performance. Place the part on the top layer with a continuous drain copper pour connected directly to the central thermal pad. Use 6-10 thermal vias (0.3-0.5 mm drill, 1.0-1.2 mm pad) under the thermal pad to inner-layer copper spreads. Keep the gate loop area as small as possible - place the gate driver within 5 mm of the gate pin and use a 10Ω gate resistor to dampen ringing. Avoid placing vias in the gate trace; route the gate signal on a single layer.
Three common pitfalls when designing with the IPLU300N04S41R1XTMA1: (1) Exceeding ±20 V V<sub>GS</sub> rating - use a gate-source Zener clamp (15-18 V) to protect against inductive transients, especially in half-bridge configurations. (2) Ignoring dv/dt-induced turn-on - in half-bridge topologies, the fast dV/dt on the drain can inject charge through C<sub>gd</sub> and falsely turn on the complementary MOSFET; use a negative gate drive bias or asymmetric gate resistors to mitigate. (3) Underestimating body diode reverse recovery - the integrated body diode has a non-trivial Q<sub>rr</sub> that may cause voltage spikes in hard-switched half-bridges; consider adding an external SiC Schottky for high-frequency applications.
For half-bridge configurations using two IPLU300N04S41R1XTMA1 devices, minimize the high-side-to-low-side source-to-drain loop inductance by placing the parts within 10 mm of each other with overlapping drain-source copper pours. The switch-node copper area should be minimized to reduce radiated EMI but must still carry 300 A continuously - use a 5-10 mm wide copper pour with multiple stitching vias. Connect the Kelvin source (if exposed separately) to the gate driver ground return, not to the power source return, to avoid source inductance-induced gate drive degradation.
Compliance Information
AEC-Q qualified to 260°C peak reflow and 175°C operating junction temperature. RoHS compliant green product, 100% lead-free per Infineon product page. REACH compliance per Infineon substance declaration. Conflict minerals compliant per CFSI reporting.
