IPN80R1K2P7ATMA1 vs IPD80R600P7ATMA1 Comparison
Detailed side-by-side comparison of IPN80R1K2P7ATMA1 by Infineon and IPD80R600P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPN80R1K2P7ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Family / Series | CoolMOS P7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage VDSS | 800 V | β |
| Continuous Drain Current ID (Tc) | 4.5 A | β |
| Maximum RDS(on) | 1200 mΞ© at VGS = 10 V | β |
| Power Dissipation PD (Tc) | 6.8 W | β |
| Gate-Source Voltage VGSS | [DATA_NEEDED: VGSS absolute maximum] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Technology | Superjunction (CoolMOS) | CoolMOS P7 super-junction |
| Package | SOT-223 (3-pin, 2 + tab) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | -55 C to +150 C |
| ESD Protection | ESD-protected gate (per CoolMOS P7 family) | β |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | β | 800 V |
| Continuous Drain Current (ID, Tc) | β | 8 A |
| Pulsed Drain Current (IDM) | β | 22 A |
| On-Resistance (RDS(on), max) | β | 600 mΞ© at VGS=10V |
| Maximum Power Dissipation (Ptot) | β | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | β | Β±30 V |
| Avalanche Energy, Single Pulse (EAS) | β | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | β | 0.17 mJ |
| Polarity | β | N-Channel |