IPN80R1K2P7ATMA1 vs IPD80R600P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPN80R1K2P7ATMA1 von Infineon und IPD80R600P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPN80R1K2P7ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,51 | $0,92 |
| Manufacturer | Infineon Technologies | — |
| Family / Series | CoolMOS P7 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage VDSS | 800 V | — |
| Continuous Drain Current ID (Tc) | 4.5 A | — |
| Maximum RDS(on) | 1200 mΩ at VGS = 10 V | — |
| Power Dissipation PD (Tc) | 6.8 W | — |
| Gate-Source Voltage VGSS | [DATA_NEEDED: VGSS absolute maximum] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Technology | Superjunction (CoolMOS) | CoolMOS P7 super-junction |
| Gehäuse | SOT-223 (3-pin, 2 + tab) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55°C to +150°C (TJ) | -55 C to +150 C |
| ESD Protection | ESD-protected gate (per CoolMOS P7 family) | — |
| RoHS Compliance | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Polarity | — | N-Channel |