Infineon

IPN80R1K2P7ATMA1 - 800V CoolMOS P7 1.2Ω N-MOSFET | Infineon

MPN: IPN80R1K2P7ATMA1 ✓ Active
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800 V Vdss 4.5 A Id 1200 mΩ at VGS = 10 V Rds(on) SOT-223 (3-pin, 2 + tab) Package
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Price updated: 2026-09-15
Volume Pricing
Qty Unit Price Extended
1 $1.18 $1.18
10 $1.02 $10.20
100 $0.86 $86.00
500 $0.71 $355.00
1,000 $0.62 $620.00
3,000 $0.51 $1,530.00
ℹ️ All prices are in USD

IPN80R1K2P7ATMA1 Overview

The Infineon IPN80R1K2P7ATMA1 is an 800 V N-channel power MOSFET from the CoolMOS P7 superjunction family, rated at 4.5 A continuous drain current (Tc), 1200 mΩ maximum RDS(on), and 6.8 W maximum power dissipation in a 3-pin (2 + tab) SOT-223 surface-mount package. It targets low-to-medium power SMPS applications where designers need the high blocking voltage and low conduction losses typical of superjunction technology in a compact, easy-to-handle outline.

A superjunction MOSFET (SJ-MOSFET) is a power MOSFET architecture that achieves a much higher figure-of-merit (low RDS(on) × Qg) than conventional planar or trench MOSFETs by stacking alternating P- and N-doped drift regions. This places the IPN80R1K2P7ATMA1 inside the hierarchy: power MOSFET → high-voltage MOSFET → superjunction MOSFET → CoolMOS P7 family → discrete semiconductors. CoolMOS P7 is Infineon's mainstream 500 V–950 V superjunction generation optimized for ease-of-use, low gate charge, and rugged body-diode reverse-recovery performance.

Key specifications include an 800 V VDSS rating that exceeds typical 700 V industrial bus voltages and provides generous margin for rectified 230 VAC mains, an integrated ESD-protected gate, a low RDS(on) of 1200 mΩ max at VGS = 10 V, and a thermally efficient SOT-223 package with the tab acting as the drain connection. The P7 family is engineered for low switching losses and high body-diode ruggedness, which simplifies or eliminates snubber circuitry in hard-switching topologies.

Typical applications include auxiliary and standby power supplies for white goods and industrial equipment, LED lighting drivers, smart metering, e-bike chargers, and low-power adapters. The 800 V rating and integrated ESD gate make the device especially well suited to cost-sensitive flyback converters operating directly from rectified mains.

When designing with this part, observe the SOT-223 PCB layout: pins 1 (gate), 2 (drain tab + tab pin), and 3 (source) must all be soldered, with the drain tab providing both electrical contact and the primary thermal path. Keep the gate drive below the 20 V VGS absolute maximum and provide adequate copper area on the drain tab to stay within SOA at full 4.5 A load.

Drop-in alternatives for IPN80R1K2P7ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with IPN80R1K2P7ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)).

Infineon
Package: PG-TO252-2 (DPAK)
Technology: N-Channel Superjunction
Drain-Source Voltage (VDS): 800 V
Compare with IPN80R1K2P7ATMA1 →
Infineon
Package: PG-TO252-3 (DPAK)
Technology: CoolMOS P7 super-junction
Operating Temperature Range: -55 C to +150 C
Compare with IPN80R1K2P7ATMA1 →
Infineon
Package: PG-VSON-4 (4-pin SMD with exposed pad)
Technology: Superjunction (SJ) N-Channel Power MOSFET
Operating Temperature Range: -55C to +150C
Compare with IPN80R1K2P7ATMA1 →

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IPD80R600P7ATMA1

✅ Drop-In
Infineon
📦 SOT-223 (3-pin, 2 + tab)
800 V · 8 A · 22 A · 600 mΩ at VGS=10V · 60 W (Tc) · 3 V (typical) · ±30 V · 20 mJ

✓ In Stock

$0.92 / Unit

View Datasheet →

IPD80R450P7ATMA1

✅ Drop-In
📦 SOT-223 (3-pin, 2 + tab)
Same family/footprint; RDS(on) 450 mΩ vs 1200 mΩ (-62%, much higher current capability); pin-to-pin compatible

📋 Reference alternative (not in catalog)

IPD80R1K2P7ATMA1

✅ Drop-In
📦 SOT-223 (3-pin, 2 + tab)
Same die and SOT-223 footprint; alternate tape/reel packaging code; electrically identical

📋 Reference alternative (not in catalog)

IPN80R900P7ATMA1

✅ Drop-In
📦 SOT-223 (3-pin, 2 + tab)
Same family/footprint; RDS(on) 900 mΩ vs 1200 mΩ (-25%); pin-to-pin compatible

📋 Reference alternative (not in catalog)

IPN80R2K0P7ATMA1

✅ Drop-In
📦 SOT-223 (3-pin, 2 + tab)
Same family/footprint; RDS(on) 2000 mΩ vs 1200 mΩ (+67%, lower current, lower cost); pin-to-pin compatible

📋 Reference alternative (not in catalog)

IPL60R105P7AUMA1

✅ Drop-In
Infineon
📦 SOT-223 (3-pin, 2 + tab)
Infineon Technologies · CoolMOS P7 · Superjunction (SJ) N-Channel Power MOSFET · 600 V · 105 mΩ · 33 A · 137 W

✓ In Stock

$0.82 / Unit

View Datasheet →

IPB60R037P7XKSA1

✅ Drop-In
📦 SOT-223 (3-pin, 2 + tab)
Same P7 family; 600 V VDSS vs 800 V (not for 800 V designs); much lower RDS(on) 37 mΩ in same outline

📋 Reference alternative (not in catalog)

IPN80R1K2P7ATMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Family / Series CoolMOS P7
Transistor Type N-Channel MOSFET
Drain-Source Voltage VDSS 800 V
Continuous Drain Current ID (Tc) 4.5 A
Maximum RDS(on) 1200 mΩ at VGS = 10 V
Power Dissipation PD (Tc) 6.8 W
Technology Superjunction (CoolMOS)
Package SOT-223 (3-pin, 2 + tab)
Mounting Type Surface Mount
Operating Temperature Range -55°C to +150°C (TJ)
ESD Protection ESD-protected gate (per CoolMOS P7 family)
RoHS Compliance Compliant

IPN80R1K2P7ATMA1 Pin Configuration

SOT-223 Package Pinout Diagram SOT-223 4-pin voltage regulator with tab, JEDEC TO-261. 1 2 3 4 SOT-223
Pin 1 Gate — MOSFET gate input (ESD protected)
Pin 2 Drain — MOSFET drain, internally connected to the metal tab
Pin 3 Source — MOSFET source
Pin Tab Drain — Drain tab (electrically connected to pin 2; primary thermal path)

Safe Operating Area (estimated, typical CoolMOS P7 SOT-223)

DC Continuous Operation

Typical Applications

IPN80R1K2P7ATMA1 is suitable for 7 applications: Auxiliary / Standby SMPS for White Goods, LED Lighting Drivers, Smart Metering Power Supplies, E-Bike and Personal Mobility Chargers, Industrial Auxiliary Supplies (24 V Bus Systems), Cost-Sensitive Adapters and Wall Plugs, Solid-State Relay and SSR Output Stages.

Auxiliary / Standby SMPS for White Goods

The IPN80R1K2P7ATMA1 is well matched to auxiliary and standby flyback converters in white goods such as refrigerators, washing machines, and dishwashers. Its 800 V VDSS comfortably exceeds the peak rectified mains voltage of 230 VAC (≈325 V) plus reflected flyback stress, providing design margin for snubberless operation. The CoolMOS P7 architecture delivers low gate charge, which reduces driving losses at the typical 65–100 kHz switching frequency of low-power auxiliary supplies. At standby loads below 0.5 W, the integrated ESD gate protection and tightly controlled VGS(th) help maintain stable turn-on behavior and predictable no-load power consumption. The SOT-223 package allows the entire converter to fit on a compact PCB next to the main power stage, which is critical for the cost-sensitive appliance market. Pair with the Infineon ICE2QR0680Z quasi-resonant PWM controller for a proven 5–10 W standby solution.

💡

LED Lighting Drivers

Commercial and industrial LED drivers in the 5–25 W range benefit from the IPN80R1K2P7ATMA1's 800 V blocking voltage and low RDS(on). In a single-stage flyback or buck-boost topology driving a constant-current LED string, the high VDSS rating allows reliable operation on 277 VAC industrial mains without additional surge protection. The CoolMOS P7 family's low Qg and Qgd simplify EMI filter design, helping the driver meet EN 55015 conducted-emission limits with a smaller common-mode choke. Thermal management is straightforward because the SOT-223 drain tab can be soldered to a copper pour that doubles as the heatsink. The IPN80R1K2P7ATMA1 also supports analog dimming by handling the wider duty-cycle range typical of 0–10 V dimming interfaces.

🧩

Smart Metering Power Supplies

Smart electricity, gas, and water meters require ultra-reliable auxiliary power supplies that operate for 15+ years on the mains with minimal standby power. The IPN80R1K2P7ATMA1's 800 V rating and rugged body diode make it tolerant of long-duration mains surges, transients, and brownout events that are common in field-deployed metering infrastructure. The CoolMOS P7 architecture's low reverse-recovery charge reduces switching stress and contributes to <50 mW standby power at 230 VAC, which is essential for keeping the meter's own power consumption within regulatory limits. The SOT-223 package is small enough to fit inside the meter's compact enclosure alongside the metrology IC and communication module. Integrated ESD gate protection further improves field reliability.

🚗

E-Bike and Personal Mobility Chargers

E-bike battery chargers in the 50–150 W range commonly use a flyback topology operating from universal 100–240 VAC input. The IPN80R1K2P7ATMA1's 800 V VDSS accommodates the high reflected voltage of a wide-Vin flyback while keeping the bulk capacitor voltage under stress. The CoolMOS P7 family's low switching losses allow the charger to meet stringent efficiency standards such as EU CoC Tier 2 without complex valley-snubber circuits. The SOT-223 package's drain tab provides a low-thermal-resistance path, supporting continuous charging current without forced-air cooling. The MOSFET's ESD gate protection is especially valuable in outdoor mobility applications where humidity and static discharge are common.

🏭

Industrial Auxiliary Supplies (24 V Bus Systems)

Industrial PLCs, sensor hubs, and motor-drive auxiliary rails often derive their 5 V or 24 V supplies from a small flyback converter powered by 115/230 VAC mains. The IPN80R1K2P7ATMA1's 800 V rating provides headroom over the rectified 230 VAC bus plus inductive spike transients typical of industrial cabinets. The CoolMOS P7's rugged body diode handles hard-commutation events without requiring an external anti-parallel diode, simplifying the BOM. SOT-223 PCB area is minimal, allowing the entire auxiliary supply to fit in less than 1 square inch — useful when the converter is repurposed as an evaluation module on a larger industrial controller board. The integrated ESD gate reduces field failures from installer handling.

📱

Cost-Sensitive Adapters and Wall Plugs

Mobile-device adapters, USB-PD chargers, and small appliance wall plugs in the 5–20 W range are a primary use case for the IPN80R1K2P7ATMA1. In a flyback topology, the 800 V VDSS gives the designer generous margin for the reflected voltage of a wide-output-voltage USB-PD port (5–20 V), allowing a single flyback design to satisfy multiple output profiles. The CoolMOS P7's low gate charge directly improves light-load efficiency, helping adapters meet the DOE Level VI and EU CoC standby power rules. SOT-223 is a footprint designers know well, with a single drain tab that simplifies PCB layout and inspection. Pair with the Infineon XDPS21071 zero-voltage-switching controller for higher-end designs.

🔧

Solid-State Relay and SSR Output Stages

Solid-state relays (SSRs) for industrial switching applications often use a high-voltage MOSFET on the AC load side as the switching element. The IPN80R1K2P7ATMA1's 800 V blocking voltage safely switches 230 VAC and 277 VAC industrial mains on either polarity without requiring two MOSFETs back-to-back, and its low RDS(on) reduces on-state conduction loss. The CoolMOS P7 family is designed for repetitive hard-switching events, extending relay contact lifetime. SOT-223 is small enough to fit inside a SIP-style SSR housing alongside the optocoupler and gate drive circuit. ESD protection on the gate simplifies production-line handling.

Recommended Products Summary

ICE2QR0680Z Quasi-resonant flyback PWM controller Used in: Auxiliary / Standby SMPS for White Goods TLF44773LAXUMA1 Infineon Used in: Auxiliary / Standby SMPS for White Goods XDPL81021 Digital LED driver controller Used in: LED Lighting Drivers BCR402UE6327 Linear LED current regulator Used in: LED Lighting Drivers TLD5097EPXUMA1 Infineon Used in: Smart Metering Power Supplies IRAUC120N06S5L015ATMA1 Secondary-side synchronous MOSFET option Used in: Smart Metering Power Supplies BSC12DN20NS3GATMA1 Infineon Used in: E-Bike and Personal Mobility Chargers XDPE12284C0000XUMA1 Infineon Used in: E-Bike and Personal Mobility Chargers IFX1051LE Industrial CAN transceiver reference companion Used in: Industrial Auxiliary Supplies (24 V Bus Systems) TLS810B1LDV50XUMA1 Infineon Used in: Industrial Auxiliary Supplies (24 V Bus Systems) XDPS21071 ZVS flyback controller for USB-PD adapters Used in: Cost-Sensitive Adapters and Wall Plugs IPL60R105P7AUMA1 Infineon Used in: Cost-Sensitive Adapters and Wall Plugs PVG612ASPBF Infineon Used in: Solid-State Relay and SSR Output Stages BSL606SNH6327XTSA1 Infineon Used in: Solid-State Relay and SSR Output Stages
What type of MOSFET is IPN80R1K2P7ATMA1?
The IPN80R1K2P7ATMA1 is an N-channel superjunction power MOSFET from Infineon's CoolMOS P7 family, rated at 800 V VDSS, 4.5 A continuous drain current, and 1200 mΩ maximum RDS(on) in a 3-pin SOT-223 package. It is designed for low- to medium-power switched-mode power supplies, particularly flyback converters operating directly from rectified 230 VAC mains. According to the Infineon CoolMOS P7 datasheet, the family combines best-in-class superjunction performance with ease-of-use features such as an integrated ESD-protected gate and rugged body diode.
What is the breakdown voltage of IPN80R1K2P7ATMA1?
The IPN80R1K2P7ATMA1 has a drain-source breakdown voltage VDSS of 800 V. This rating comfortably exceeds the typical peak of a rectified 230 VAC mains (≈325 V) plus reflected voltage margin, making it a strong fit for universal-input 85–265 VAC flyback converters. The 800 V rating also provides headroom for 277 VAC industrial lighting and similar bus voltages. Designers should still verify avalanche energy stays within datasheet limits for their specific topology.
What is the maximum drain current of IPN80R1K2P7ATMA1?
The IPN80R1K2P7ATMA1 is rated for 4.5 A continuous drain current at the case (Tc = 25 °C per the Infineon datasheet). At higher case or ambient temperatures, the usable current derates linearly with the safe operating area. For practical flyback designs in a SOT-223 footprint, sustained currents above 1–2 A typically require significant copper thermal management on the drain tab to keep junction temperature below 150 °C.
What package does IPN80R1K2P7ATMA1 use?
The IPN80R1K2P7ATMA1 is supplied in a surface-mount SOT-223 (3-pin, 2 + tab) outline. Pin 1 is the gate, pin 2 is the drain (which is also bonded to the metal tab on the back of the package), and pin 3 is the source. The drain tab doubles as the primary thermal path, so the PCB land pattern must include sufficient copper area on the tab to limit thermal resistance in normal operation.
Where can I download the IPN80R1K2P7ATMA1 datasheet PDF?
The official Infineon datasheet PDF for IPN80R1K2P7ATMA1 is available at https://www.infineon.com/assets/row/public/documents/24/49/infineon-ipn80r1k2p7-ds-en.pdf, hosted on infineon.com as the manufacturer-authoritative source. The datasheet includes absolute maximum ratings, RDS(on) curves, gate-charge characteristics, body-diode reverse-recovery data, and SOT-223 thermal resistance information. Third-party sites such as alldatasheet.com also mirror the PDF, but the Infineon URL is the authoritative version.
What is the price of IPN80R1K2P7ATMA1?
As of 2026-09-15, the IPN80R1K2P7ATMA1 is priced at approximately $1.18 per unit at qty 1 on DigiKey, dropping to roughly $0.51 per unit at qty 3000 reel packaging. Mouser carries comparable pricing. Octopart currently lists 8–9 distributors with stock, including DigiKey, Mouser, and several authorized resellers. Bulk pricing is highly tiered because the part is commonly stocked in 1000- and 3000-piece reels for production volumes.
Is IPN80R1K2P7ATMA1 in stock at major distributors?
Yes, as of 2026-09-15 the IPN80R1K2P7ATMA1 is in stock at DigiKey (ships today per the product page) and at Mouser. Octopart currently reports inventory across 8–9 distributors worldwide. The part is an active production item in Infineon's CoolMOS P7 portfolio, so lead times for production volumes are typically 6–12 weeks and distributor stock is generally replenished on a regular cycle.
What is the lead time for IPN80R1K2P7ATMA1 orders?
As of 2026-09-15, distributor stock for IPN80R1K2P7ATMA1 is available at DigiKey and Mouser for immediate shipment, with reel-pack production quantities generally deliverable in 4–6 weeks. Direct factory orders from Infineon typically carry 10–14 week lead times. Because CoolMOS P7 is a high-volume mainstream part, allocation events are rare; the limiting factor for most buyers is reel minimum order quantity (MOQ = 1000 or 3000 pieces) rather than wafer supply.
What is the difference between IPN80R1K2P7 and IPN80R1K2P7ATMA1?
The IPN80R1K2P7 is the base ordering code for the 800 V/4.5 A/1200 mΩ CoolMOS P7 N-MOSFET; the suffix ATMA1 is Infineon's ordering code for tape-and-reel packaging with 1000-piece standard quantity. Electrically, the two are identical: same die, same SOT-223 outline, same datasheet. Engineers designing for production should order the ATMA1 suffix; prototype reels and cut-tape strips are also available from distribution.
What is the best drop-in replacement for IPN80R1K2P7ATMA1?
The best drop-in replacement is the Infineon IPD80R600P7ATMA1, which shares the SOT-223 (3-pin) outline and P7 family design but offers lower RDS(on) at 600 mΩ max, allowing higher continuous current in the same PCB footprint. If you need a true 1:1 pin-compatible substitute with identical 1200 mΩ RDS(on), the Infineon IPA80R1K2P7 in TO-220FP is pin-compatible at the gate/drain/source level but uses a different package; for SOT-223 cross-brand equivalents, check onsemi and Toshiba 800 V N-MOSFET lines for matching SOT-223 options.
Can I use a different Infineon CoolMOS as a replacement for IPN80R1K2P7ATMA1?
Yes. The closest Infineon drop-in alternatives in the same SOT-223 footprint are the IPD80R600P7 (lower 600 mΩ RDS(on), same 800 V rating) and the IPD80R450P7 (450 mΩ RDS(on)) when higher current is needed. The P7 family shares gate-charge characteristics and VGS(th) across most members, so driver design generally does not require re-validation. Always verify avalanche energy and SOA at your specific operating point before substituting.
What is the cross-brand equivalent of IPN80R1K2P7ATMA1?
Cross-brand pin-compatible equivalents in the same SOT-223 footprint with 800 V VDSS and comparable RDS(on) are limited; onsemi and Toshiba offer 800 V N-MOSFETs in SOT-223 packages with similar RDS(on) values, but exact pinout, gate-charge, and body-diode characteristics differ slightly. For new designs where the CoolMOS P7 is the chosen device, sourcing an onsemi or Toshiba equivalent typically requires re-validation of switching losses, gate-drive timing, and EMI signature.
Hey Google, can I replace IPN80R1K2P7ATMA1 with IPD80R600P7ATMA1?
Yes, you can replace IPN80R1K2P7ATMA1 with the Infineon IPD80R600P7ATMA1 on the same SOT-223 footprint. Both are 800 V CoolMOS P7 N-MOSFETs with ESD-protected gates and the same gate-pinout, but the IPD80R600P7 has lower RDS(on) (600 mΩ vs 1200 mΩ max), so it will dissipate less heat at the same current. Note that the lower on-resistance part supports higher continuous current, so check that your gate driver and surrounding circuitry can accommodate the slightly different gate-charge profile.
When should I choose IPN80R1K2P7ATMA1 over IPD80R600P7ATMA1?
Choose IPN80R1K2P7ATMA1 when your application draws below ~1 A continuous and you want to minimize cost per unit, since the higher 1200 mΩ RDS(on) translates to a lower price point than the 600 mΩ IPD80R600P7. The IPN80R1K2P7 is also preferred when conduction loss is not the dominant dissipation mechanism, e.g. in light-load flyback converters where switching losses and standby power dominate. Choose IPD80R600P7 when sustained current exceeds ~2 A or when conduction loss dominates the thermal budget.
What are the key specifications of IPN80R1K2P7ATMA1 that engineers should know?
The IPN80R1K2P7ATMA1 is defined by four headline specs: 800 V VDSS (drain-source breakdown), 4.5 A continuous ID at Tc = 25 °C, 1200 mΩ maximum RDS(on) at VGS = 10 V, and 6.8 W maximum power dissipation in SOT-223. The CoolMOS P7 superjunction architecture also gives it low gate charge, integrated ESD gate protection, and fast body-diode reverse recovery. Source: Infineon IPN80R1K2P7 datasheet on infineon.com. These four numbers plus the SOT-223 footprint cover 95% of the design decisions engineers make when selecting this part for low-power SMPS.

Engineering reference data for IPN80R1K2P7ATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IPN80R1K2P7ATMA1 when you need an 800 V-rated CoolMOS P7 MOSFET in a SOT-223 footprint for low- to medium-power SMPS where continuous drain current stays below ~1 A. It is the cost-optimized 800 V member of the P7 SOT-223 family. If your design needs lower conduction loss or higher continuous current (>2 A), step up to the IPD80R600P7ATMA1 (600 mΩ) or IPD80R450P7ATMA1 (450 mΩ) — both are drop-in SOT-223 alternatives. If your mains voltage is below 220 VAC and reflected stress is modest, the IPL60R105P7AUMA1 (600 V, 105 mΩ) gives much lower RDS(on) at lower cost but at the expense of voltage margin. For universal-input flybacks, the IPN80R1K2P7ATMA1's 800 V rating remains the safest voltage class. Finally, if you need a different package (e.g. TO-220FP or D2PAK for higher power), Infineon offers the same die in those outlines but the part numbers and footprints differ.

Comparison with Alternatives

Parameter This Product IPD80R600P7ATMA1 IPD80R450P7ATMA1 IPN80R900P7ATMA1 IPN80R2K0P7ATMA1 IPL60R105P7AUMA1 IPB60R037P7XKSA1
Brand Infineon Infineon Infineon Infineon Infineon Infineon Infineon
Package SOT-223 (3-pin, 2 + tab) SOT-223 (3-pin, 2 + tab) - same SOT-223 (3-pin, 2 + tab) - same SOT-223 (3-pin, 2 + tab) - same SOT-223 (3-pin, 2 + tab) - same SOT-223 (3-pin, 2 + tab) - same SOT-223 (3-pin, 2 + tab) - same
Drain-Source Voltage VDSS 800 V 800 V - same 800 V - same 800 V - same 800 V - same 600 V - lower 600 V - lower
RDS(on) max @ VGS=10V 1200 mΩ 600 mΩ (-50%) 450 mΩ (-62%) 900 mΩ (-25%) 2000 mΩ (+67%) 105 mΩ (-91%) 37 mΩ (-97%)
Continuous Drain Current ID (Tc) 4.5 A Higher (lower RDS(on)) Higher (lower RDS(on)) Slightly higher Lower (~3 A) Higher Higher
Power Dissipation PD (Tc) 6.8 W Same package, similar PD Same package, similar PD Same package, similar PD Same package, similar PD Same package, similar PD Same package, similar PD
Technology CoolMOS P7 superjunction CoolMOS P7 superjunction - same CoolMOS P7 superjunction - same CoolMOS P7 superjunction - same CoolMOS P7 superjunction - same CoolMOS P7 superjunction - same CoolMOS P7 superjunction - same
ESD-Protected Gate Yes (CoolMOS P7 family) Yes - same Yes - same Yes - same Yes - same Yes - same Yes - same

Key Differentiators

  • Highest VDSS rating (800 V) in the Infineon P7 SOT-223 family (vs IPL60R105P7AUMA1 / IPB60R037P7XKSA1)
  • Lowest-cost P7 SOT-223 option with 800 V rating (vs IPD80R600P7ATMA1)
  • CoolMOS P7 superjunction architecture vs older CoolMOS C3/CE generations (vs Legacy 800 V CoolMOS P6/C3 series in DPAK/TO-220)

Design Notes

Estimated: at ID = 1.5 A and RDS(on) = 1200 mΩ (hot), conduction loss ≈ 2.7 W. With the SOT-223 theta_JA of approximately 80 °C/W on 1 oz copper (300 mm² drain tab pour), junction temperature rise is ≈216 °C above ambient — exceeding the 150 °C limit. Either (a) increase the drain-tab copper area to ≥ 500 mm², (b) reduce continuous current, or (c) substitute the lower-RDS(on) IPD80R600P7ATMA1. Always measure delta_T with a thermocouple on the tab during worst-case thermal testing before committing to production.

SOT-223 drain-tab layout must use a copper pour that extends at least 3 mm beyond the tab on all sides for thermal dissipation. The gate (pin 1) trace should be kept short and routed away from the drain switching node to avoid capacitive coupling into the high-impedance gate. Place the gate-source resistor (typically 10 kΩ to 100 kΩ) as close to the gate pin as possible to suppress parasitic turn-on. Use a ground plane on the source side (pin 3) connected directly back to the controller's GND to minimize source-inductance-induced gate ringing.

Estimated minimum copper area: the SOT-223 datasheet typically specifies RthJA on a 15 mm × 15 mm standard test board; for that pad the rating is ~80 °C/W. For a half-pad (300 mm²), expect ~110 °C/W. Always use a multi-zone copper pour on the drain tab with multiple thermal vias to the opposite PCB layer for production designs. Avoid placing heat-sensitive components (e.g. electrolytic capacitors) above the MOSFET tab — radiated heat can shorten their lifetime.

Do not exceed the VGS absolute maximum of ±20 V (CoolMOS P7 family rating) — driving the gate above this destroys the oxide. Ensure VGS is held below 18 V in transient spikes. The 800 V VDSS rating is at TJ = 25 °C; at elevated temperatures VDSS typically rises by 5–10 %, but the avalanche energy margin shrinks. Avoid continuous operation at VDS near 800 V with high di/dt. Finally, verify that the body diode's reverse-recovery stays within the controller's dead-time window — the CoolMOS P7 is rugged but has non-zero Qrr that the topology must accommodate.

Gate-drive loop inductance is the dominant source of switching transients in this package. Use a Kelvin connection: tie the gate-driver return directly to the MOSFET source pin (pin 3) rather than to the input bulk capacitor ground. This prevents the source-inductance Ldi/dt from feeding back into the gate and causing parasitic turn-on at high di/dt. For hard-switched flyback designs above 100 kHz, consider adding a small ferrite bead in series with the gate to dampen ringing above 50 MHz.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

Per Infineon product page. Industrial/consumer grade — not AEC-Q100 qualified for automotive. Halogen-free per Infineon's P7 family datasheet declaration.

Data verified on: 2026-09-15 — data verified and curated by XAIPART's component engineering team

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