IPP037N08N3GXKSA1 vs IPB110P06LMATMA1 Comparison
Detailed side-by-side comparison of IPP037N08N3GXKSA1 by Infineon and IPB110P06LMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP037N08N3GXKSA1 - 80V 100A 3.7mΞ© OptiMOS 3 MOSFET | Infineon
IPP037N08N3GXKSA1 β Active
Specification Comparison
| Parameter | IPP037N08N3GXKSA1 | IPB110P06LMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $1.31 |
| FET Type | N-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) - OptiMOSβ’ 3 | OptiMOS (trench MOSFET) |
| Drain to Source Voltage (Vdss) | 80 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 100 A | β |
| RDS(on) Max @ VGS=10V | 3.75 mΞ© | β |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 6 V, 10 V | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 214 W | β |
| Package | PG-TO220-3 (Through Hole) | β |
| Mounting Type | Through Hole | Surface Mount |
| Pin Count | 3 | β |
| Operating Temperature Range | -55Β°C to +175Β°C (junction) | -55 C to +175 C (TJ) |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ @ VGS=10V] | β |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | β |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | β | -60 V |
| Continuous Drain Current (ID) at TC=25C | β | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | β | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | β | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | β | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | β | +/-20 V |
| Package / Case | β | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | β | PG-TO263-3-2 |
| Gate Drive Level | β | Logic-level compatible |
| Lead-Free | β | Yes |