IPP037N08N3GXKSA1 vs IPB110P06LMATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP037N08N3GXKSA1 disebabkan oleh Infineon dan IPB110P06LMATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPP037N08N3GXKSA1 | IPB110P06LMATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) - OptiMOS™ 3 | OptiMOS (trench MOSFET) |
| Drain to Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 100 A | — |
| RDS(on) Max @ VGS=10V | 3.75 mΩ | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 6 V, 10 V | — |
| Power Dissipation (Pd) @ Tc=25°C | 214 W | — |
| Kemasan | PG-TO220-3 (Through Hole) | — |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Kiraan Pin | 3 | — |
| Gambaran Suhu Operasi | -55°C to +175°C (junction) | -55 C to +175 C (TJ) |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ @ VGS=10V] | — |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) at TC=25C | — | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Kemasan / Case | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| Lead-Free | — | Yes |