IPP075N15N3GXKSA1 vs BSC190N15NS3GATMA1 Comparison
Detailed side-by-side comparison of IPP075N15N3GXKSA1 by Infineon and BSC190N15NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon
IPP075N15N3GXKSA1 β ActiveInfineon
BSC190N15NS3GATMA1
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IPP075N15N3GXKSA1 | BSC190N15NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.92 | $0.98 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 3 | β |
| Technology | N-Channel MOSFET (OptiMOS 3) | OptiMOS 3 (N-Channel) |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Power Dissipation (PD, Tc=25C) | 300 W | β |
| On-State Resistance (RDS(on) max, VGS=10V) | 7.5 mOhm | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage absolute max] | β |
| Package | PG-TO220-3 (TO-220 through-hole) | PG-TDSON-8-1 (TDSON-8 EP) |
| Mounting Type | Through Hole | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: junction operating temperature range] | -55 C to +150 C |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: total gate charge] |
| Lead-Free / RoHS | RoHS Compliant | β |
| Ordering Code Suffix | GXKSA1 (Tube pack, RoHS compliant) | β |
| Continuous Drain Current (ID) at Tc=25C | β | 50 A |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Gate Threshold Voltage (VGS(th)) | β | 2.5 V to 3.5 V |
| On-Resistance RDS(on) max at VGS=10V | β | 19 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | β | [DATA_NEEDED: RDS(on) typical at 10V] |
| Power Dissipation (PD) at Tc=25C | β | 125 W |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |