IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon
MPN: IPP075N15N3GXKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.12 | $4.12 |
| 10 | $3.55 | $35.50 |
| 100 | $2.98 | $298.00 |
| 500 | $2.41 | $1,205.00 |
| 1,000 | $1.92 | $1,920.00 |
IPP075N15N3GXKSA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used in power conversion circuits such as DC-DC converters, motor drives, synchronous rectifiers, and load switches. It sits in the power-semiconductor hierarchy between BJTs/IGBTs (lower switching speed, simpler drive) and emerging wide-bandgap devices such as GaN and SiC (faster, higher voltage). Within Infineon's portfolio, the OptiMOS family is the 100V-300V N-channel flagship line targeting synchronous rectification, OR-ing, hot-swap, and high-frequency switching.
Key features include 7.5 mOhm maximum RDS(on) at VGS=10V, low gate charge Qg for fast switching transitions, an integrated body diode for synchronous rectification duty, and avalanche-rated single-pulse robustness. The TO-220 package provides a tab that doubles as the drain terminal and as a mounting surface for an external heatsink, supporting sustained high-current operation. The -GXKSA1 suffix indicates the tube-packaged, RoHS-compliant, qualified ordering code.
Typical applications include 48V telecom isolated DC-DC converters, synchronous rectification in server and datacom buck stages, solar micro-inverters and string inverters, battery protection and OR-ing in uninterruptible power supplies, motor control in industrial drives, hot-swap controllers in telecom equipment, and Class-D audio amplifier output stages. The low RDS(on) directly reduces conduction loss, while the low gate charge enables hundreds of kHz switching for smaller magnetics.
When designing with this device, drive the gate with a dedicated gate driver (10V VGS recommended) and minimize the gate-loop inductance. For continuous operation above ~50W dissipation, attach the TO-220 tab to a heatsink with thermal compound. Ensure VDS stays below 150V including switching transients and ringing; add a snubber or RC damper if ringing exceeds 80% of VDS rating. Source-pin inductance limits switching speed at high di/dt - use the TO-220 with Kelvin-source packages only when current exceeds 50A continuous.
Drop-in alternatives for IPP075N15N3GXKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPP075N15N3GXKSA1 (same form factor and footprint) β differing in Package, Technology, Drain-Source Voltage (VDS), Mounting Type, MSL Level.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPP075N15N3G
β Drop-Inπ Reference alternative (not in catalog)
IPP320N20N3GXKSA1
β Drop-Inβ In Stock
$1.36 / Unit
View Datasheet βBSC190N15NS3GATMA1
β Drop-Inβ In Stock
$0.98 / Unit
View Datasheet βIXTQ96N15P
β Drop-Inπ Reference alternative (not in catalog)
FDP075N15A_F102
β Drop-Inπ Reference alternative (not in catalog)
IPP075N15N3GXKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 3 |
| Technology | N-Channel MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A |
| Power Dissipation (PD, Tc=25C) | 300 W |
| On-State Resistance (RDS(on) max, VGS=10V) | 7.5 mOhm |
| Package | PG-TO220-3 (TO-220 through-hole) |
| Mounting Type | Through Hole |
| Lead-Free / RoHS | RoHS Compliant |
| Ordering Code Suffix | GXKSA1 (Tube pack, RoHS compliant) |
IPP075N15N3GXKSA1 Pin Configuration
| Pin 1 | Gate (G) β Gate control input - drive with 10V VGS for full enhancement; threshold VGS(th) typically 2-4V |
| Pin 2 | Drain (D) β Main current terminal; also electrically bonded to the metal tab on the back of the TO-220 package for heatsink mounting |
| Pin 3 | Source (S) β Return path for drain current and gate drive reference; minimize source-lead inductance for clean switching |
Safe Operating Area (SOA) - IPP075N15N3GXKSA1
Typical Applications
IPP075N15N3GXKSA1 is suitable for 6 applications: 48V Telecom Hot-Swap and OR-ing, Synchronous Rectification in DC-DC Converters, Solar Micro-Inverter and String Inverter, Battery Protection and UPS OR-ing, Industrial Motor Drive and H-Bridge, Class-D Audio Amplifier Output Stage.
48V Telecom Hot-Swap and OR-ing
The IPP075N15N3GXKSA1 is well matched to 48V telecom hot-swap and OR-ing paths because its 150V VDS rating provides 3x headroom above the 48V nominal bus (including -48V battery backup at 60V max), while the 7.5 mOhm RDS(on) minimizes steady-state conduction loss on the live-insertion MOSFET. At 50A continuous load, conduction loss is I^2 x R = 50^2 x 0.0075 = 18.75W, manageable on a small TO-220 clip-on heatsink. The low gate charge Qg allows sub-100us inrush turn-on when paired with a dedicated hot-swap controller, and the avalanche-rated body diode handles reverse-current transients during plug-in events without external TVS protection.
Recommended
Synchronous Rectification in DC-DC Converters
In 48V-to-12V or 48V-to-5V isolated DC-DC converter secondary-side synchronous rectification stages, IPP075N15N3GXKSA1 delivers 7.5 mOhm RDS(on) and fast switching thanks to low Qg - critical for >200 kHz operation where switching loss dominates conduction loss. The OptiMOS 3 platform's low Figure of Merit (FOM = RDS(on) x Qg) is the key figure of merit for synchronous-rect MOSFET selection. With 100A continuous rating, a single TO-220 device handles 500-700W converter output without paralleling, simplifying layout. Place the source lead return path with minimum loop inductance for clean gate drive.
Recommended
Solar Micro-Inverter and String Inverter
Solar micro-inverters and string inverters operate from 30-150V DC bus (depending on panel count), and the IPP075N15N3GXKSA1's 150V VDS rating covers 80V string inverters directly without paralleling. The 7.5 mOhm RDS(on) achieves 96-98% efficiency in the high-frequency H-bridge or push-pull stage, and the 100A ID rating handles 5-10kW inverter output per device. The TO-220 package's bolt-down tab enables chassis-mount heatsinking for outdoor IP65 enclosure thermal management. OptiMOS 3's proven field reliability in solar installations across thousands of hours of thermal-cycling stress makes this part a go-to choice for residential and commercial PV inverters.
Recommended
Battery Protection and UPS OR-ing
In UPS and battery-backed systems, IPP075N15N3GXKSA1 serves as the OR-ing MOSFET between battery and bus, or as the load-side disconnect switch in battery management. Its 7.5 mOhm RDS(on) at 100A continuous passes full UPS load with minimal voltage drop (0.75V at 100A), and the 150V VDS rating exceeds typical 48V or 96V battery pack voltages with substantial margin. The low Qg enables sub-100us disconnect response on fault detection, and the avalanche-rated body diode protects against reverse-battery hookup events. For higher-voltage packs (200V+), derate by paralleling two devices or selecting IPP320N20N3GXKSA1 for 200V headroom.
Recommended
Industrial Motor Drive and H-Bridge
Three-phase industrial motor drives and H-bridge DC motor controllers use IPP075N15N3GXKSA1 as the high-side and low-side switch in 100-150V bus applications such as 96V battery-powered forklifts, AGVs, and 110V DC industrial tools. At 100A continuous and 300W power dissipation, the TO-220 package on a 2-3 C/W heatsink handles 200W continuous dissipation at 50A RMS three-phase load. The 7.5 mOhm RDS(on) keeps conduction loss below 30W at full load, supporting natural-convection cooling in IP54 enclosures. Pair with the IRS2181STRPBF or 2ED21844S06JXUMA1 gate driver for level-shifted high-side drive.
Recommended
Class-D Audio Amplifier Output Stage
High-power Class-D audio amplifiers use IPP075N15N3GXKSA1 in the output H-bridge for 100-500W systems. The 7.5 mOhm RDS(on) ensures <0.1% THD contribution from output-stage losses, and the 150V VDS rating handles amplifier rails up to +/-75V. The fast switching transition (low Qg) supports 250-500 kHz PWM carrier frequency, reducing output LC filter size and cost. The TO-220 package is the standard form factor for discrete-output Class-D designs competing with integrated amplifier modules. For best thermal performance, mount the tab to a chassis-mounted heatsink that doubles as part of the amplifier enclosure.
Recommended
Recommended Products Summary
Engineering reference data for IPP075N15N3GXKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP075N15N3G | IPP320N20N3GXKSA1 | BSC190N15NS3GATMA1 | IXTQ96N15P | FDP075N15A_F102 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | IXYS | onsemi |
| Package | PG-TO220-3 (TO-220) | PG-TO220-3 (TO-220) | PG-TO220-3 (TO-220) | PG-TO220-3 (TO-220) | PG-TO220-3 (TO-220) | PG-TO220-3 (TO-220) |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 200 V | 150 V | 150 V | 150 V |
| Technology | OptiMOS 3 (N-Channel) | OptiMOS 3 (N-Channel) | OptiMOS 3 (N-Channel) | OptiMOS 3 (N-Channel) | PolarHV (N-Channel) | PowerTrench (N-Channel) |
| Drop-in Compatibility | Reference | 100% - same die, same TO-220 | 70% - same TO-220, higher VDS/RDS(on) | 80% - same TO-220, higher RDS(on) | 90% - same TO-220, different vendor | 90% - same TO-220, different vendor |
Key Differentiators
- Lowest RDS(on) in Infineon TO-220 150V portfolio at 7.5 mOhm (vs BSC190N15NS3GATMA1)
- Higher drain current rating vs IXYS cross-brand equivalent (vs IXTQ96N15P)
- OptiMOS 3 industry-leading FOM for high-frequency designs (vs FDP075N15A_F102)
Design Notes
At 100A continuous drain current and RDS(on)=7.5 mOhm, conduction loss is I^2 x R = 100^2 x 0.0075 = 75W. With TO-220 junction-to-ambient thermal resistance of 62 C/W (free air, no heatsink), junction temperature would rise 75 x 62 = 4650C above ambient - far exceeding the 175C max junction. A heatsink with thermal resistance below 1 C/W is mandatory for 100A operation. Use thermal compound with thermal conductivity >3 W/mK between the TO-220 tab and heatsink, and ensure the mounting torque is 0.6-0.8 Nm for proper contact pressure.
Minimize the gate-drive loop inductance to prevent gate-oscillation and excessive ringing during switching transitions. The gate-source loop area should be <1 cm^2, achieved by placing the gate-driver physically adjacent to the TO-220 source lead. Add a 10-100 Ohm gate-source resistor (Rge) to damp high-frequency ringing, and place a 100nF ceramic bypass capacitor directly between VCC and GND of the gate driver. For switching frequencies above 100 kHz at high di/dt, consider a Kelvin-source TO-220 package (e.g., TO-220 FullPAK or D2PAK with source-sense pin) to decouple the gate-drive return from the high-current source path.
Estimated switching loss at 100 kHz with Qg=70 nC and Vdrive=10V is P_sw = 0.5 x VDS x ID x (tr+tf) x fsw. Assuming tr=tf=20ns and VDS=100V, ID=50A: P_sw = 0.5 x 100 x 50 x 40e-9 x 1e5 = 10W per device. Do not exceed VDS ratings during turn-off transients - add a snubber (RC damper, e.g. 10 Ohm + 100pF) across drain-source if ringing exceeds 80% of 150V rating. Always use a dedicated gate driver (do not drive 70 nC Qg directly from a logic-level GPIO) - insufficient gate current slows switching and causes excessive switching loss.
Compliance Information
RoHS compliant per -GXKSA1 ordering suffix. Not AEC-Q100 qualified (industrial/consumer grade); for automotive use, select an AEC-Q100-qualified part. Halogen-free status not explicitly stated in the verified data - marked unknown.
