IPT007N06NATMA1 vs IPD031N06L3GATMA1 Comparison
Detailed side-by-side comparison of IPT007N06NATMA1 by Infineon and IPD031N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT007N06NATMA1
IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon
IPT007N06NATMA1 β ActiveInfineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΞ© N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 β ActiveSpecification Comparison
| Parameter | IPT007N06NATMA1 | IPD031N06L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.84 | $0.48 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, TC=25C) | 300 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 400 A |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | β |
| Power Dissipation (PD, TC=25C) | 375 W | β |
| Operating Temperature Range | -55 C to +175 C (TJ) | -55Β°C to +175Β°C |
| Package | PG-HSOF-8-1 (TOLL) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-channel | β |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | β |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | 1 (Unlimited) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Standard Pack Quantity | 3000 (Tape & Reel) | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 100 A |
| Maximum Power Dissipation (PD) at TC=25Β°C | β | 167 W |
| RDS(on) Max at VGS=10V | β | 3.1 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 1.0 V to 2.2 V |
| Gate Drive Voltage (Max RDS(on)) | β | 4.5 V, 10 V |
| Total Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg typical value] |
| Series | β | OptiMOS 3 |