IPT008N06NM5LFATMA1 vs BSC016N06NSTATMA1 Comparison

Detailed side-by-side comparison of IPT008N06NM5LFATMA1 by Infineon and BSC016N06NSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT008N06NM5LFATMA1 BSC016N06NSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.40 $0.92
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 / Linear FET —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc) 454 A —
Pulsed Drain Current [DATA_NEEDED: pulsed ID] —
On-Resistance RDS(on) at VGS=10 V 0.8 mΩ —
Gate-Source Threshold Voltage VGS(th) 3.6 V (typ, 250 µA test) —
Power Dissipation (Tc) 278 W 167 W
Operating Temperature Range -55 °C to +175 °C (TJ) -55 C to +150 C
Package PG-HSOF-8 (single, flat-lead) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Gate Drive (recommended) 10 V (logic-level compatible above 4.5 V VGS) —
Technology Trench MOSFET (OptiMOS 5) OptiMOS 5
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
REACH Status Compliant —
AEC-Q100 not_qualified (industrial-grade by default) —
Part Number — BSC016N06NSTATMA1
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 31 A
On-Resistance RDS(on) max (VGS=10V) — 1.6 mOhm
Power Dissipation (Ta) — 3 W
Lead-Free — Yes
Series — OptiMOS

Datasheets & Resources

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