BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon
MPN: BSC016N06NSTATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.08 | $540.00 |
| 1,000 | $0.92 | $920.00 |
Drop-in alternatives for BSC016N06NSTATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSC016N06NSTATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC016N06NSTATMA1 |
| FET Type | N-Channel |
| Technology | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | 60 V |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A |
| Continuous Drain Current (ID, Ta=25C) | 31 A |
| On-Resistance RDS(on) max (VGS=10V) | 1.6 mOhm |
| Power Dissipation (Tc) | 167 W |
| Power Dissipation (Ta) | 3 W |
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 C to +150 C |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Series | OptiMOS |
BSC016N06NSTATMA1 Pin Configuration
| Pin 1 | Source — Source connection (shorted with pins 2, 3) |
| Pin 2 | Source — Source connection (shorted with pins 1, 3) |
| Pin 3 | Source — Source connection (shorted with pins 1, 2) |
| Pin 4 | Kelvin-Source — Kelvin source sense for gate drive return |
| Pin 5 | Gate — Gate drive input |
| Pin 6 | Drain — Drain connection (shorted with pins 7, 8 and exposed pad) |
| Pin 7 | Drain — Drain connection (shorted with pins 6, 8 and exposed pad) |
| Pin 8 | Drain — Drain connection (shorted with pins 6, 7 and exposed pad) |
Safe Operating Area
Typical Applications
BSC016N06NSTATMA1 is suitable for 6 applications: 48V Synchronous Rectification in Telecom DC-DC Converters, Hot-Swap and OR-ing in Server Power Distribution, Industrial 24V Brushless DC Motor Drive, Battery Management and Protection in 12V/24V Packs, USB Power Delivery (PD) and High-Current Type-C Sinks, Solar Microinverter and Power Optimizer Output Stages.
48V Synchronous Rectification in Telecom DC-DC Converters
The BSC016N06NSTATMA1's 1.6 mOhm RDS(on) at 10V VGS and 100A Tc-rated continuous drain current make it ideal as the synchronous FET in 48V-to-low-voltage isolated DC-DC converter modules powering telecom base-station and networking equipment. With a 60V VDS rating providing adequate headroom for 48V nominal rails with transient excursions, this OptiMOS 5 device keeps conduction losses low at the high currents common in such converters. The SuperSO8 (PG-TDSON-8 FL) package offers reduced source inductance via the Kelvin-source pin, enabling clean gate drive and low switching loss even at 200 kHz+ switching frequencies typical of LLC and phase-shifted full-bridge topologies. The part's optimized gate charge minimizes driver losses, allowing designers to push switching frequency higher for greater power density without sacrificing efficiency.
Recommended
Hot-Swap and OR-ing in Server Power Distribution
Server 48V distribution buses use hot-swap controllers and OR-ing MOSFETs to manage inrush current and provide redundant power paths. The BSC016N06NSTATMA1's 1.6 mOhm RDS(on) minimizes steady-state conduction loss in 48V bus OR-ing, while its 100A current rating handles peak transient loads during disk spin-up and CPU burst workloads. The 60V VDS provides 12V of headroom above 48V nominal, absorbing inductive transients during hot-plug events. Designers combine this MOSFET with a hot-swap controller such as the Infineon ITS40xx series to sense current, fold back during faults, and provide controlled turn-on with dV/dt limiting that protects downstream capacitors. The SuperSO8 package's exposed thermal pad supports sustained current flow with proper PCB copper pour for heat spreading.
Recommended
Industrial 24V Brushless DC Motor Drive
The BSC016N06NSTATMA1 serves as the low-side switch in 24V industrial brushless DC (BLDC) motor drives for factory automation, robotics, and CNC machines. With a 60V VDS rating that comfortably handles 24V bus transients from regenerative braking, and 1.6 mOhm RDS(on) that keeps I^2R losses low during continuous motor commutation, this OptiMOS 5 part enables compact half-bridge and three-phase inverter designs. The 100A Tc-rated current capability supports high-torque motor phases without paralleling multiple FETs. Pairing with a 3-phase gate driver such as the IRS21834STRPBF or the integrated 6EDL04N02PRXUMA1 simplifies PCB layout while maintaining switching performance, and the SuperSO8 package's thermal performance allows sustained operation at high PWM frequencies typical of field-oriented control (FOC) schemes.
Recommended
Battery Management and Protection in 12V/24V Packs
Lithium-ion battery packs for e-mobility, UPS systems, and portable industrial tools rely on low-resistance MOSFETs for high-side and low-side disconnect switches. The BSC016N06NSTATMA1's 1.6 mOhm RDS(on) reduces steady-state loss during pack discharge, extending runtime and improving thermal headroom during high-current pulses. Its 60V VDS accommodates 12V and 24V lead-acid replacement packs with margin for inductive load transients when the pack drives DC motors or relays. The SuperSO8 package supports compact BMS PCB designs and enables simple dual-FET back-to-back configurations for true bidirectional disconnect. Designers pair this MOSFET with battery monitor ICs and protection controllers for cell-balancing and overcurrent shutoff coordination.
Recommended
USB Power Delivery (PD) and High-Current Type-C Sinks
USB-PD 3.1 Extended Power Range (EPR) systems can negotiate voltages up to 48V and currents up to 5A, requiring switching MOSFETs with low RDS(on) and robust thermal performance. The BSC016N06NSTATMA1 functions as the protection and load-switch FET in Type-C sink devices, where its 1.6 mOhm RDS(on) keeps conduction loss below 1W at 5A load, preserving efficiency budget for the rest of the system. The 60V VDS rating safely handles 48V EPR negotiated voltage. The SuperSO8 package enables compact designs in travel adapters, hubs, and docking stations where board area is constrained. Pairing with a Type-C port controller and PD sink controller completes the high-current delivery chain while supporting USB-PD's fast role-swap and programmable power-supply features.
Recommended
Solar Microinverter and Power Optimizer Output Stages
Microinverters and DC power optimizers used in residential solar installations require efficient switching at high currents, often from 30V-50V photovoltaic input rails. The BSC016N06NSTATMA1 serves as the synchronous MOSFET in the DC-DC boost or buck stage that conditions PV panel output before inversion. With a 60V VDS rating providing margin above typical 50V open-circuit panel voltage, and 1.6 mOhm RDS(on) minimizing I^2R loss at high currents, this part supports peak efficiencies above 98% in well-designed converters. The SuperSO8 package's thermal capability supports the sustained operation needed for grid-tied solar applications. Pairing with a CoolMOS-class high-voltage switch for the inverter stage completes the topology.
Recommended
Recommended Products Summary
Engineering reference data for BSC016N06NSTATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC016N06NSATMA1 | BSC028N06NSTATMA1 | BSC097N06NSATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TDSON-8 FL (SuperSO8 5x6 mm) - same | PG-TDSON-8 FL (SuperSO8 5x6 mm) - same | PG-TDSON-8 FL (SuperSO8 5x6 mm) - same | PG-TDSON-8 FL (SuperSO8 5x6 mm) - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Drain-to-Source Voltage VDS max | 60 V | 60 V | 60 V | 60 V | 100 V |
| On-Resistance RDS(on) max @10V | 1.6 mOhm | 1.6 mOhm | 2.8 mOhm | 9.7 mOhm | 9.8 mOhm |
| Continuous Drain Current ID @ Tc=25C | 100 A | 100 A | 90 A (estimated) | 57 A (estimated) | [DATA_NEEDED] |
| Technology Family | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Gate-Source Voltage VGS max | ±20 V | ±20 V | ±20 V | ±20 V | ±20 V |
| Power Dissipation @ Tc=25C | 167 W | 167 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Approx Unit Price @ qty-1000 | $0.92 | ~$0.92 | ~$0.75 | ~$0.45 | ~$1.10 |
Key Differentiators
- Lowest RDS(on) in the 60V OptiMOS 5 SuperSO8 family (vs BSC097N06NSATMA1)
- Lower RDS(on) at same VDS rating (vs BSC028N06NSTATMA1)
- Higher current rating than 100V same-package alternative (vs BSC098N10NS5ATMA1)
Design Notes
At 50A continuous current, the BSC016N06NSTATMA1 dissipates approximately 4W (I^2 x RDS(on) = 50^2 x 0.0016 = 4W) in the SuperSO8 package. With a typical theta_JA of ~50 C/W on a 1 oz copper PCB, this yields a junction temperature rise of ~200C above ambient, clearly exceeding the 150C maximum. Designers must provide substantial copper pour (2+ square inches), thermal vias to internal layers, or forced airflow to keep junction temperature below 125C for reliable long-term operation. Estimated thermal calculation based on datasheet theta_JC of ~0.9 C/W and assumed 50 C/W theta_JA.
Use the Kelvin-source pin (pin 4) as the gate-driver return to minimize switching loop inductance and prevent gate-oscillation. Connect the gate-driver ground directly to pin 4, NOT to the power-source PCB trace. Place a 10-ohm gate-source resistor in parallel with the gate-driver output to suppress ringing and reduce dV/dt-induced turn-on. The exposed drain pad must be soldered to a PCB thermal pad with at least 8 thermal vias (0.3 mm drill) connecting to inner copper layers for proper heat extraction. Follow the Infineon SuperSO8 land pattern from the application note AN_201609_PL16_001.
Do not exceed VGS of ±20V or risk permanent gate-oxide breakdown. The standard 10V gate drive achieves the specified 1.6 mOhm RDS(on), but driving below 6V will multiply RDS(on) by 3-5x. For logic-level applications, use a charge pump or bootstrap supply to guarantee full gate enhancement. The drain-source body diode is not optimized for reverse-recovery; in half-bridge topologies where body-diode conduction is expected (e.g., during dead-time), add an external Schottky clamp or use a co-packaged part to avoid shoot-through losses.
Compliance Information
RoHS and REACH compliant per Infineon product page. Standard variant is not AEC-Q100 qualified; automotive variants in the same family carry different suffix designations.
