IPT022N10NF2SATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IPT022N10NF2SATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT022N10NF2SATMA1
IPT022N10NF2SATMA1 - 100V 2.2mΞ© StrongIRFET 2 N-MOSFET | Infineon
IPT022N10NF2SATMA1 β ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveSpecification Comparison
| Parameter | IPT022N10NF2SATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.99 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | StrongIRFET 2 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V(BR)DSS) | 100 V | β |
| Continuous Drain Current (Id) at Ta | 29 A | β |
| Continuous Drain Current (Id) at Tc | 236 A | β |
| Typical RDS(on) at VGS=10V | 2.2 mΞ© | β |
| Power Dissipation at Ta | 3.8 W | β |
| Power Dissipation at Tc | 250 W | β |
| Package | PG-HSOF-8-10 (8 leads + tab) | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | OptiMOS 7 trench MOSFET |
| Operating Temperature Range | -55C to +175C | -55Β°C to +175Β°C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | β |
| RoHS Status | Compliant | Compliant |
| Series | β | Automotive OptiMOS 7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | β | 3.3 mΞ© |
| Continuous Drain Current (ID) at Tj | β | 130 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25Β°C | β | 118 W |
| Gate-Source Voltage (VGS) max | β | Β±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | β | Automotive Grade (per Infineon datasheet header) |
| MSL Level | β | 1 (per JEDEC J-STD-020, typical for this package) |