IPT022N10NF2SATMA1 vs IAUCN08S7L033ATMA1 Comparison

Detailed side-by-side comparison of IPT022N10NF2SATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN08S7L033ATMA1 IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ Active

Specification Comparison

Parameter IPT022N10NF2SATMA1 IAUCN08S7L033ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family StrongIRFET 2 —
FET Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 100 V —
Continuous Drain Current (Id) at Ta 29 A —
Continuous Drain Current (Id) at Tc 236 A —
Typical RDS(on) at VGS=10V 2.2 mΩ —
Power Dissipation at Ta 3.8 W —
Power Dissipation at Tc 250 W —
Package PG-HSOF-8-10 (8 leads + tab) PG-TDSON-8-34 (SSO8, 5x6 mm²)
Mounting Type Surface Mount Surface Mount
Technology Trench MOSFET OptiMOS 7 trench MOSFET
Operating Temperature Range -55C to +175C -55°C to +175°C (TJ)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] —
RoHS Status Compliant Compliant
Series — Automotive OptiMOS 7
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Qualification — Automotive Grade (per Infineon datasheet header)
MSL Level — 1 (per JEDEC J-STD-020, typical for this package)

Datasheets & Resources

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