IPTC039N15NM5ATMA1 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of IPTC039N15NM5ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC076N04NDATMA1

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 βœ“ Active

Specification Comparison

Parameter IPTC039N15NM5ATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.05 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS 3
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 150 V β€”
Continuous Drain Current (ID) at Ta 21 A β€”
Continuous Drain Current (ID) at Tc 190 A β€”
Power Dissipation (PD) at Ta 3.8 W β€”
Power Dissipation (PD) at Tc 319 W β€”
On-Resistance RDS(on) typical 3.9 mOhm β€”
Gate Charge Qg typical 74 nC β€”
Maximum Gate-Source Voltage (VGS) 20 V β€”
Operating Temperature -55 C to +175 C (junction) β€”
Package PG-HDSOP-16-2 (top-side cooled) β€”
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench Trench MOSFET (OptiMOS 3)
Cooling Top-side cooled (case above PCB) β€”
RoHS Status Compliant β€”
Configuration β€” Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max β€” 40 V
Continuous Drain Current (ID) β€” 20 A (Tc)
Gate Threshold Voltage (VGS(th)) β€” 4 V (max, typical)
On-Resistance RDS(on) max β€” 7.6 mOhm
Power Dissipation (Ta) β€” 2.3 W
Power Dissipation (Tc) β€” 65 W
Qgd/Qgs Ratio β€” < 0.8 (high shot-through immunity)
Operating Junction Temperature β€” -55 C to +175 C
Package / Case β€” PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free β€” Compliant (Pb-free plating)
FET Type β€” 2x N-Channel MOSFET array

Datasheets & Resources

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