IPTC039N15NM5ATMA1 - 150V 190A OptiMOS 5 N-Channel MOSFET | Infineon
MPN: IPTC039N15NM5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.5 | $6.50 |
| 10 | $5.85 | $58.50 |
| 100 | $5.2 | $520.00 |
| 500 | $4.6 | $2,300.00 |
| 1,000 | $4.05 | $4,050.00 |
IPTC039N15NM5ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used as the active element in switching power supplies, motor drives, and load switching. The N-channel variant conducts when the gate is pulled high relative to the source. MOSFETs sit within the power-management IC hierarchy as discrete semiconductor switches, complementing gate-driver ICs (such as the IR2109SPBF and IRSM808-105MH), DC-DC controllers, and protection supervisors in a typical power-conversion block.
Key features include low RDS(on) of 3.9 mOhm at VGS = 10 V, optimized switching performance via 74 nC typical Qg, and 319 W power dissipation capability at TC = 25 C. The PG-HDSOP-16-2 package uses top-side cooling for direct attachment to thermal interfaces, which is critical in compact assemblies where PCB-bottom copper alone cannot dissipate the heat. The die is qualified for high-reliability switching converters operating at switching frequencies from 50 kHz to 1 MHz.
The IPTC039N15NM5 utilizes Infineon's OptiMOS 5 trench technology, balancing low figure-of-merit (FOM = RDS(on) x Qg) for hard-switched topologies such as synchronous rectification, half-bridge, and full-bridge converters. Low FOM directly translates into higher converter efficiency at fixed switching frequency, or higher frequency operation at fixed efficiency.
Typical applications include e-vehicle traction inverters and onboard chargers, cordless power-tool motor drives, industrial SMPS synchronous rectifiers, and 48 V mild-hybrid DC-DC converters. The 150 V rating provides 25-30% headroom above the 100-120 V DC-link rails common in 48 V automotive systems.
When designing with this device, maintain VGS drive above 10 V for full RDS(on) rating and ensure the gate-driver can source/sink the peak gate current required by the 74 nC Qg. The top-side cooling pad must be soldered to a thermal spreader for full 319 W dissipation at TC = 25 C.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, enabling faster component selection and second-source qualification for engineers designing high-current 150 V power stages.
Drop-in alternatives for IPTC039N15NM5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPTC039N15NM5ATMA1 (same form factor and footprint) — differing in Technology, Package, Operating Temperature Range, Series, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPTC039N15NM5
✅ Drop-In📋 Reference alternative (not in catalog)
BSC076N04NDATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IPD65R380E6ATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IQE220N15NM5CGSCATMA1
✅ Drop-In✓ In Stock
$2.18 / Unit
View Datasheet →IRF1310NSTRLPBF
✅ Drop-In✓ In Stock
$0.84 / Unit
View Datasheet →IPTC039N15NM5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Ta | 21 A |
| Continuous Drain Current (ID) at Tc | 190 A |
| Power Dissipation (PD) at Ta | 3.8 W |
| Power Dissipation (PD) at Tc | 319 W |
| On-Resistance RDS(on) typical | 3.9 mOhm |
| Gate Charge Qg typical | 74 nC |
| Maximum Gate-Source Voltage (VGS) | 20 V |
| Operating Temperature | -55 C to +175 C (junction) |
| Package | PG-HDSOP-16-2 (top-side cooled) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 5 trench |
| Cooling | Top-side cooled (case above PCB) |
| RoHS Status | Compliant |
IPTC039N15NM5ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (connected to thermal pad region) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain terminal |
| Pin 6 | Drain — Drain terminal |
| Pin 7 | Drain — Drain terminal |
| Pin 8 | Drain — Drain terminal |
| Pin 9 | NC — Not connected (per datasheet) |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin 11 | NC — Not connected (per datasheet) |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | Source — Source terminal |
| Pin 14 | Source — Source terminal |
| Pin 15 | Source — Source terminal |
| Pin 16 | Source — Source terminal (top-side thermal pad connection region) |
Safe Operating Area (DC)
Typical Applications
IPTC039N15NM5ATMA1 is suitable for 6 applications: E-Vehicle Traction Inverters, Cordless Power Tool Motor Drives, Industrial SMPS Synchronous Rectifiers, 48 V Mild-Hybrid DC-DC Converters, Solar Microinverters and Optimizers, Battery Formation and Test Equipment.
E-Vehicle Traction Inverters
The IPTC039N15NM5ATMA1 is well-matched for 48 V and 96 V mild-hybrid traction inverter power stages. Its 150 V VDS rating provides 25-30% headroom above the 100-120 V DC-link rails typical in e-mobility systems, while the 190 A continuous drain current at TC=25 C supports high-torque motor-drive switching. The 3.9 mOhm typical RDS(on) at VGS=10 V minimizes conduction losses during the high-current PWM cycles of traction operation, and the 74 nC typical Qg enables switching frequencies of 50-100 kHz in the inverter stage without excessive gate-drive loss. The top-side cooled PG-HDSOP-16-2 package allows direct attachment to the inverter cold-plate, critical for compact automotive powertrain assemblies.
Recommended
Cordless Power Tool Motor Drives
The IPTC039N15NM5ATMA1 fits high-power cordless tool motor drives operating from 18 V to 96 V battery packs. The 3.9 mOhm RDS(on) reduces I2R losses in the brushless DC motor switching stage, extending battery runtime - a critical parameter for end-user-perceived tool performance. The 190 A ID supports the high-peak-current pulses typical during motor start-up and stall conditions, while the PG-HDSOP-16-2 package with top-side cooling allows integration into compact tool housings where PCB-bottom copper area is limited. The 150 V VDS also provides headroom for inductive voltage transients from motor winding commutation.
Recommended
Industrial SMPS Synchronous Rectifiers
In 48 V-input telecom and industrial SMPS synchronous rectifier stages, the IPTC039N15NM5ATMA1 delivers low conduction loss via 3.9 mOhm RDS(on) and fast switching via 74 nC Qg. The figure-of-merit RDS(on) x Qg = 3.9 mOhm x 74 nC = 289 mOhm-nC positions this part competitively for hard-switched synchronous rectification at 100-200 kHz. The 150 V VDS rating covers 48 V and 60 V DC-input rails with margin, while the PG-HDSOP-16-2 top-side cooling enables high-density rectifier designs where multiple MOSFETs share a single cold-plate in 1U/2U power-supply form factors.
Recommended
48 V Mild-Hybrid DC-DC Converters
The IPTC039N15NM5ATMA1 is well-suited for 48 V mild-hybrid vehicle DC-DC converters stepping down to 12 V auxiliary rails. The 150 V VDS rating covers the 48 V bus with substantial transient headroom for load-dump events, while the 3.9 mOhm RDS(on) minimizes losses at the 100-300 A currents typical of 48V-to-12V converters. The PG-HDSOP-16-2 top-side cooled package is preferred for automotive under-hood assemblies where PCB-bottom cooling is insufficient and direct chassis-attached cold-plates are standard. The part's 175 C maximum junction temperature rating supports under-hood thermal environments.
Recommended
Solar Microinverters and Optimizers
In solar microinverter and power-optimizer applications, the IPTC039N15NM5ATMA1 serves as the primary switching device or synchronous rectifier for 60 V to 120 V PV-string DC-DC stages. The 150 V VDS rating covers standard residential PV strings with margin for open-circuit transients under cold-weather over-voltage conditions. The 3.9 mOhm RDS(on) at 10 V VGS enables high-efficiency conversion critical for solar energy-harvesting ROI, and the top-side cooled PG-HDSOP-16-2 package suits outdoor microinverter enclosures with thermally conductive potting compounds.
Recommended
Battery Formation and Test Equipment
The IPTC039N15NM5ATMA1 is well-matched for battery-formation and capacity-test equipment requiring high-current pulse discharge through Li-ion cells. The 190 A continuous ID at TC=25 C supports the high-current pulses used in DCIR (direct-current internal resistance) measurement and capacity cycling, while the 3.9 mOhm RDS(on) minimizes heat generation during controlled discharge cycles. The 150 V VDS also provides headroom for multi-cell series-string configurations common in battery-pack test fixtures. The top-side cooled package suits rack-mounted test equipment with shared cold-plates.
Recommended
Recommended Products Summary
Engineering reference data for IPTC039N15NM5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPTC039N15NM5 | IQE220N15NM5CGSCATMA1 | ISC015N06NM5ATMA1 | BSC076N04NDATMA1 | IPD65R380E6ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-HDSOP-16-2 (top-side cooled) | PG-HDSOP-16-2 (same) | PG-HDSOP-16 (similar HDSOP family) | PG-HDSOP-16 (similar HDSOP family) | PG-TDSON-8 (different) | PG-TO252-3 DPAK (different) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage VDS | 150 V | 150 V (same) | 150 V (same) | 60 V (-60%) | 40 V (-73%) | 650 V (+333%) |
| On-Resistance RDS(on) typical | 3.9 mOhm | 3.9 mOhm (same) | 3.9 mOhm (same) | 1.5 mOhm | 7.6 mOhm | 380 mOhm |
| Technology | OptiMOS 5 trench | OptiMOS 5 trench (same) | OptiMOS 5 trench (same) | OptiMOS 5 trench (same) | OptiMOS (different gen) | CoolMOS E6 |
| Cooling Method | Top-side cooled | Top-side cooled (same) | Top-side cooled | Top-side cooled | Bottom-cooled (PCB copper) | Bottom-cooled (PCB copper) |
Key Differentiators
- Top-side cooled package enables higher power density than bottom-cooled DPAK alternatives (vs IPD65R380E6ATMA1 (DPAK))
- Optimized 150 V VDS class for 48 V and 96 V DC-link applications (vs ISC015N06NM5ATMA1 (60 V class))
- OptiMOS 5 technology achieves best-in-class RDS(on) x Qg FOM (vs IRF1310NSTRLPBF (legacy IR technology))
Design Notes
Estimated: At 190 A continuous drain current with 3.9 mOhm RDS(on), conduction loss is approximately P = I^2 x RDS(on) = 190^2 x 0.0039 = 141 W. The PG-HDSOP-16-2 package dissipates 319 W at TC = 25 C with top-side cooling. Designers MUST attach the top thermal pad to a heatsink or cold-plate with thermal interface material (TIM) to maintain junction temperature below 175 C. PCB-bottom copper alone is insufficient for sustained high-current operation.
Layout for PG-HDSOP-16-2 should minimize the high-current loop area between drain and source to reduce parasitic inductance that causes voltage overshoot during switching. Use wide copper pours (>=2 oz copper) on drain and source pads, place the gate-driver IC within 10 mm of the gate pin, and add a gate-source resistor (10-100 kOhm) to prevent false turn-on from dv/dt-induced Miller coupling. Per Infineon application notes, top-side thermal pad must be soldered to a thermal-spreader PCB region or heatsink for full 319 W dissipation.
Avoid these common pitfalls when designing with IPTC039N15NM5ATMA1: (1) Exceeding 20 V VGS absolute maximum will permanently damage the gate oxide - use a gate-driver with proper clamping. (2) Operating beyond the SOA curve at high VDS and high ID simultaneously can cause thermal runaway; refer to datasheet SOA graph. (3) Inadequate top-side thermal attachment leads to junction overheating even at moderate currents - the package's advantage is ONLY realized with proper cold-plate interface. (4) Insufficient gate-drive voltage (below 8 V) prevents full RDS(on) rating and increases losses dramatically.
For half-bridge and full-bridge topologies, place the high-side and low-side MOSFETs symmetrically to balance thermal distribution. Use Kelvin-source connection (separate source-sense pin) when available to eliminate source-inductance effects on gate-drive timing. Keep the gate-drive loop (gate-driver output to MOSFET gate to MOSFET source back to gate-driver ground) area below 10 mm^2 to minimize parasitic inductance and ringing. Per Infineon OptiMOS 5 application notes, a small RC snubber (10-100 Ohm + 1-10 nF) across drain-source can dampen high-frequency ringing in hard-switched topologies.
Compliance Information
RoHS and REACH compliance confirmed by Infineon product page. AEC-Q100 automotive qualification status not explicitly stated in verified web data - confirm with Infineon for automotive programs. Lead-free (Pb-free) reflow compatible per modern Infineon MOSFET datasheet conventions.
