IPTC054N15NM5ATMA1 vs ISC037N12NM6ATMA1 Comparison
Detailed side-by-side comparison of IPTC054N15NM5ATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΞ© OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 β ActiveInfineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IPTC054N15NM5ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.52 | $3.62 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 (IPT family) | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 17.5 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 143 A | β |
| Power Dissipation (PD) at TA=25Β°C | 3.8 W | β |
| Power Dissipation (PD) at TC=25Β°C | 250 W | β |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 5.4 mΞ© | β |
| Gate-Source Voltage (VGS) max | 20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Total Gate Charge (Qg) typical | 58 nC | β |
| Forward Body Diode Voltage (VSD) | 0.83 V | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-HDSOP-16-2 (16-pin top-cooled) | PG-TDSON-8 FL (SuperSO8) |
| Mounting Type | Surface Mount (top-side cooled) | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Technology | β | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | β | 120 V |
| Continuous Drain Current (Id) at Ta=25C | β | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | β | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | β | 3.7 mOhm |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 214 W |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg total] |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Avalanche Energy Rated | β | Yes (single-pulse) |