IPTC054N15NM5ATMA1 vs ISC037N12NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPTC054N15NM5ATMA1 disebabkan oleh Infineon dan ISC037N12NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPTC054N15NM5ATMA1 ISC037N12NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 (IPT family) —
FET Type N-Channel —
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at TA=25°C 17.5 A —
Continuous Drain Current (ID) at TC=25°C 143 A —
Power Dissipation (PD) at TA=25°C 3.8 W —
Power Dissipation (PD) at TC=25°C 250 W —
On-Resistance RDS(on) at VGS=10V, ID=50A 5.4 mΩ —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) typical 58 nC —
Forward Body Diode Voltage (VSD) 0.83 V —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-HDSOP-16-2 (16-pin top-cooled) PG-TDSON-8 FL (SuperSO8)
Jenis Pemasangan Surface Mount (top-side cooled) Surface Mount
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Technology — OptiMOS 6 (N-channel trench MOSFET)
Drain-Source Voltage (Vds) — 120 V
Continuous Drain Current (Id) at Ta=25C — 19.2 A
Pulsed Drain Current (Idm) at Tc — 163 A
On-Resistance Rds(on) typ at Vgs=10V — 3.7 mOhm
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 214 W
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ — [DATA_NEEDED: Qg total]
Gambaran Suhu Operasi — -55C to +175C (junction)
Avalanche Energy Rated — Yes (single-pulse)

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