IQD005N04NM6ATMA1 vs ISC037N12NM6ATMA1 Comparison

Detailed side-by-side comparison of IQD005N04NM6ATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQD005N04NM6ATMA1

IQD005N04NM6ATMA1 - 40V 0.5mΞ© N-Ch MOSFET PG-TSON-8-9 | Infineon

IQD005N04NM6ATMA1 βœ“ Active
Infineon
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter IQD005N04NM6ATMA1 ISC037N12NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $3.62
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 6 Power-Transistor β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at Ta=25C 58 A β€”
Pulsed Drain Current (IDM) at Tc 610 A β€”
On-Resistance RDS(on) max @ VGS=10V 0.5 mOhm β€”
Power Dissipation (Ta) 3 W β€”
Power Dissipation (Tc) 333 W β€”
Package PG-TSON-8-9 (PQFN 5x6 mm) PG-TDSON-8 FL (SuperSO8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C -55C to +175C (junction)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] β€”
Technology OptiMOS 6 trench MOSFET OptiMOS 6 (N-channel trench MOSFET)
RoHS Status Compliant Compliant
MSL Level 1 1 (per JEDEC J-STD-020)
Drain-Source Voltage (Vds) β€” 120 V
Continuous Drain Current (Id) at Ta=25C β€” 19.2 A
Pulsed Drain Current (Idm) at Tc β€” 163 A
On-Resistance Rds(on) typ at Vgs=10V β€” 3.7 mOhm
Power Dissipation at Ta β€” 3 W
Power Dissipation at Tc β€” 214 W
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ β€” [DATA_NEEDED: Qg total]
Avalanche Energy Rated β€” Yes (single-pulse)

Datasheets & Resources

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