IQD005N04NM6ATMA1 vs ISC037N12NM6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQD005N04NM6ATMA1 sa pamamagitan ng Infineon at ISC037N12NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQD005N04NM6ATMA1 ISC037N12NM6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 6 Power-Transistor —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Ta=25C 58 A —
Pulsed Drain Current (IDM) at Tc 610 A —
On-Resistance RDS(on) max @ VGS=10V 0.5 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 333 W —
Packhaging PG-TSON-8-9 (PQFN 5x6 mm) PG-TDSON-8 FL (SuperSO8)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +150C -55C to +175C (junction)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Technology OptiMOS 6 trench MOSFET OptiMOS 6 (N-channel trench MOSFET)
Tindminan RoHS Compliant Compliant
Level ng MSL 1 1 (per JEDEC J-STD-020)
Drain-Source Voltage (Vds) — 120 V
Continuous Drain Current (Id) at Ta=25C — 19.2 A
Pulsed Drain Current (Idm) at Tc — 163 A
On-Resistance Rds(on) typ at Vgs=10V — 3.7 mOhm
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 214 W
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ — [DATA_NEEDED: Qg total]
Avalanche Energy Rated — Yes (single-pulse)

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