IQD005N04NM6CGATMA1 vs IQE036N08NM6CGSCATMA1 Comparison
Detailed side-by-side comparison of IQD005N04NM6CGATMA1 by Infineon and IQE036N08NM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD005N04NM6CGATMA1
IQD005N04NM6CGATMA1 - 40V 0.5mΞ© OptiMOS 6 MOSFET | Infineon
IQD005N04NM6CGATMA1 β ActiveInfineon
IQE036N08NM6CGSCATMA1
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQD005N04NM6CGATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.88 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 6 (trench FET) | Trench MOSFET (OptiMOS 6) |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| RDS(on) Typical | 0.5 mΞ© | β |
| Continuous Drain Current (ID) at Ta | 58 A | β |
| Continuous Drain Current (ID) at Tc | 610 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed rating] | β |
| Power Dissipation at Ta | 3 W | β |
| Power Dissipation at Tc | 333 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (TJ) | -55 C to +150 C (junction, per datasheet derating curves) |
| Package | PG-TTFN-9-U02 (Source-Down 5x6 mmΒ²) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 9 | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Source Configuration | Source-Down (bottom-side source for PCB heatsinking) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 6 |
| Part Status | β | Active |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at TA | β | 16.7 A |
| Continuous Drain Current (ID) at TC | β | 118 A |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 125 W |
| Package / Case | β | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Configuration | β | Source Down, Center Gate, Dual-Side Cooling |
| Packing | β | Tape and Reel (suffix ATMA1) |
| Voltage Rating | β | 60 V to 100 V category (80 V nominal) |