IQD009N06NM5ATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of IQD009N06NM5ATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IQD009N06NM5ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.96 | $0.62 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (Ta) | 42 A | β |
| Continuous Drain Current (Tc) | 445 A | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 333 W | β |
| RDS(on) Maximum | 0.9 mΞ© @ VGS = 10 V | β |
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (trench) | Trench MOSFET (OptiMOS 5) |
| Operating Temperature | -55 Β°C to +175 Β°C | β |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| Operating Temperature Range | β | -55 C to +175 C |
| MSL (Moisture Sensitivity Level) | β | 1 |