IQD009N06NM5ATMA1 vs ISC015N06NM5ATMA1 Vergleich
Detaillierter Direktvergleich von IQD009N06NM5ATMA1 von Infineon und ISC015N06NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IQD009N06NM5ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,96 | $0,62 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (Ta) | 42 A | — |
| Continuous Drain Current (Tc) | 445 A | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| RDS(on) Maximum | 0.9 mΩ @ VGS = 10 V | — |
| Gehäuse | PG-TSON-8-9 (PQFN 5x6) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (trench) | Trench MOSFET (OptiMOS 5) |
| Betriebstemperatur | -55 °C to +175 °C | — |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | MSL 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| MSL (Moisture Sensitivity Level) | — | 1 |