IQD063N15NM5SCATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of IQD063N15NM5SCATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD063N15NM5SCATMA1
IQD063N15NM5SCATMA1 - 150V 5.1mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 β Active
Specification Comparison
| Parameter | IQD063N15NM5SCATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.35 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 151 A | β |
| Continuous Drain Current (ID) at TA=25Β°C | 14.4 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-Resistance RDS(on) at VGS=10V | 5.1 mΞ© | β |
| On-Resistance RDS(on) at VGS=4.5V | 6.32 mΞ© (typ) | β |
| Gate-Source Threshold Voltage (VGS(th)) | 3.8 V (max) | β |
| Total Gate Charge (QG) at VGS=10V | 48 nC | β |
| Input Capacitance (Ciss) | 3.6 nF | β |
| Output Capacitance (Coss) | 900 pF | β |
| Reverse Transfer Capacitance (Crss) | 21 pF | β |
| Maximum Power Dissition (PD) at TC=25Β°C | 333 W | β |
| Maximum Power Dissition (PD) at TA=25Β°C | 3 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55 C to +175 C |
| Package | PG-WHSON-8-U02 (WHSON-8 with exposed pad) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| Technology | β | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | β | 1 |