IQD063N15NM5SCATMA1 vs ISC015N06NM5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQD063N15NM5SCATMA1 disebabkan oleh Infineon dan ISC015N06NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQD063N15NM5SCATMA1 - 150V 5.1mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IQD063N15NM5SCATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25°C | 151 A | — |
| Continuous Drain Current (ID) at TA=25°C | 14.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) at VGS=10V | 5.1 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | 6.32 mΩ (typ) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.8 V (max) | — |
| Total Gate Charge (QG) at VGS=10V | 48 nC | — |
| Input Capacitance (Ciss) | 3.6 nF | — |
| Output Capacitance (Coss) | 900 pF | — |
| Reverse Transfer Capacitance (Crss) | 21 pF | — |
| Maximum Power Dissition (PD) at TC=25°C | 333 W | — |
| Maximum Power Dissition (PD) at TA=25°C | 3 W | — |
| Gambaran Suhu Operasi | -55°C to +175°C | -55 C to +175 C |
| Kemasan | PG-WHSON-8-U02 (WHSON-8 with exposed pad) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | — | 1 |