IQDH29NE2LM5CGSCATMA1 vs IQEH50NE2LM7UCGSCATMA1 Comparison

Detailed side-by-side comparison of IQDH29NE2LM5CGSCATMA1 by Infineon and IQEH50NE2LM7UCGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQDH29NE2LM5CGSCATMA1

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 βœ“ Active
Infineon
IQEH50NE2LM7UCGSCATMA1

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQDH29NE2LM5CGSCATMA1 IQEH50NE2LM7UCGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.84 $1.78
FET Type N-Channel β€”
Technology OptiMOS 5 Power-Transistor Silicon N-Channel Power MOSFET
Drain-Source Voltage (VDS) 25 V β€”
Continuous Drain Current (Ta) 75 A β€”
Continuous Drain Current (Tc) 789 A β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 278 W β€”
Maximum On-Resistance RDS(on) 0.29 mΞ© β€”
Gate Threshold Voltage VGS(th) 2 V (typ) β€”
Package PG-WHTFN-9-U02 (WHTFN EP) PG-WHTFN-9-1 (surface mount)
Pin Count 9 β€”
Mounting Type Surface Mount Surface Mount
Cooling Dual-side exposed pad (top + bottom) β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
RoHS Status Compliant β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 7 Power-Transistor
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) Max β€” 25 V
Continuous Drain Current (ID) at TA β€” 54 A
Continuous Drain Current (ID) at TC β€” 422 A
RDS(on) Max β€” 0.5 mΞ©
Gate Threshold Voltage (VGS(th)) typ β€” 2 V
Power Dissipation (PD) at TA β€” 2.5 W
Power Dissipation (PD) at TC β€” 150 W
Maximum Junction Temperature β€” 175 Β°C
Series β€” OptiMOS 7

Datasheets & Resources

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