IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon
MPN: IQDH29NE2LM5CGSCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.26 | $3.26 |
| 10 | $2.95 | $29.50 |
| 100 | $2.41 | $241.00 |
| 500 | $2.08 | $1,040.00 |
| 1,000 | $1.84 | $1,840.00 |
IQDH29NE2LM5CGSCATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to control current flow between the drain and source. Power MOSFETs such as this one fall within the hierarchy discrete semiconductor > transistor > MOSFET > power MOSFET > OptiMOS family, and they serve as the key building blocks of SMPS, motor control, and synchronous rectification stages where low conduction and switching losses are critical.
Key features include a 2 V gate threshold voltage, dual-sided cooling via the PG-WHTFN-9 exposed pad, and an OptiMOS 5 trench process that simultaneously reduces RDS(on), gate charge, and reverse-recovery losses. The 5 mm × 6 mm outline keeps the footprint competitive with industry-standard PQFN 5×6 land patterns, simplifying layout migration.
Architecturally, the part uses Infineon's latest-generation OptiMOS 5 silicon, which minimizes figure-of-merit (FOM = RDS(on) × Qg) to balance conduction and switching performance. The bottom-side exposed pad is metallurgically bonded for top-and-bottom dual cooling, allowing designers to attach a PCB heatsink or thermal via array for heat extraction in high-current rails. Compared with older OptiMOS 3 parts, this generation cuts switching losses by approximately 30 percent at the same RDS(on).
Typical applications include 12 V synchronous rectification in telecom and server SMPS, hot-swap and OR-ing controllers in HPC and AI accelerator boards, USB-PD and eMMC buck/fet stages, and low-voltage brushless DC motor drive half-bridges. Its low gate charge also makes it well suited to high-frequency LLC and buck topologies above 300 kHz.
When designing with this device, ensure the gate-drive voltage exceeds 4.5 V for full enhancement, and place the gate resistor near the gate pad to dampen parasitic ringing. The exposed pad must be soldered to a sufficiently large copper pour to maintain junction temperature within the SOA under continuous high-current operation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet.
Drop-in alternatives for IQDH29NE2LM5CGSCATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQDH29NE2LM5CGSCATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, RoHS Status, Cooling.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQDH29NE2LM5CGSC
✅ Drop-In📋 Reference alternative (not in catalog)
IQDH88N06LM5CGSCATMA1
✅ Drop-In✓ In Stock
$2.31 / Unit
View Datasheet →IQEH54NE2LM7UCGATMA1
✅ Drop-In✓ In Stock
$1.95 / Unit
View Datasheet →IQEH68NE2LM7UCGATMA1
✅ Drop-In✓ In Stock
$1.35 / Unit
View Datasheet →IQEH50NE2LM7UCGSCATMA1
✅ Drop-In✓ In Stock
$1.78 / Unit
View Datasheet →IQDH29NE2LM5CGSCATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 5 Power-Transistor |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (Ta) | 75 A |
| Continuous Drain Current (Tc) | 789 A |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 278 W |
| Maximum On-Resistance RDS(on) | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | 2 V (typ) |
| Package | PG-WHTFN-9-U02 (WHTFN EP) |
| Pin Count | 9 |
| Mounting Type | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) |
| RoHS Status | Compliant |
IQDH29NE2LM5CGSCATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (10 V typical for full enhancement) |
| Pin 2 | Source — Source connection (Kelvin source for gate return) |
| Pin 3 | Source — Source connection |
| Pin 4 | Source — Source connection |
| Pin 5 | Drain — Drain connection (electrically tied to exposed pad) |
| Pin 6 | Drain — Drain connection |
| Pin 7 | Drain — Drain connection |
| Pin 8 | Drain — Drain connection |
| Pin 9 | Drain — Drain connection (center pad serves as main thermal path) |
Safe Operating Area (SOA) - DC
Typical Applications
IQDH29NE2LM5CGSCATMA1 is suitable for 6 applications: 12 V Synchronous Rectification in SMPS, Hot-Swap and OR-ing Controllers in HPC/AI Boards, USB-PD and High-Current Buck Converter FETs, Low-Voltage Brushless DC Motor Drive Half-Bridge, Telecom 48 V Intermediate Bus Converters, Battery Protection and Load Switch for Power Tools.
12 V Synchronous Rectification in SMPS
The IQDH29NE2LM5CGSCATMA1 is purpose-built for 12 V synchronous rectification in telecom and server SMPS where its 0.29 mΩ RDS(on) minimizes conduction loss on the low-side FET. With a 25 V VDS rating the part operates safely below the 12 V rail with margin for transient spikes, and its 789 A continuous drain current at TC supports the high peak currents of multi-phase VRM topologies. Placed as the low-side switch in a buck converter with 10 V gate drive, the device achieves sub-nanosecond turn-on losses, materially improving 80 PLUS Titanium efficiency. Compared with a Schottky rectifier at the same current, the MOSFET halves conduction loss but requires careful dead-time control to avoid body-diode conduction.
Recommended
Hot-Swap and OR-ing Controllers in HPC/AI Boards
In hot-swap and OR-ing stages of HPC accelerator boards and AI servers, the IQDH29NE2LM5CGSCATMA1 carries the inrush and load current at 12 V rails with negligible loss thanks to its 0.29 mΩ RDS(on). The 25 V VDS comfortably handles the 12 V nominal plus transient ringing from hot-plug events, while the dual-side exposed pad allows designers to spread heat across both PCB planes. Placing the FET in the load path between the backplane and the local bulk capacitors limits inrush to safe values and protects downstream ASICs. Compared with eFuse ICs at the same current, this MOSFET achieves lower steady-state voltage drop at the cost of lacking built-in fault protection, so it is usually paired with an external hot-swap controller.
Recommended
USB-PD and High-Current Buck Converter FETs
USB-PD 3.1 EPR designs that deliver 28 V or 36 V over Type-C benefit from a low-resistance high-current switch, but most 5 V and 9 V PDOs use 12 V intermediate rails where the IQDH29NE2LM5CGSCATMA1 sits as the synchronous FET. Its 789 A continuous drain current at TC far exceeds any Type-C cable rating, ensuring the part never limits system current. The OptiMOS 5 process keeps gate charge low so that switching frequencies of 500 kHz to 1 MHz are practical, enabling small magnetics in compact travel adapters. Compared with older OptiMOS 3 parts, this generation reduces switching losses by approximately 30 percent at the same RDS(on), directly raising adapter efficiency.
Recommended
Low-Voltage Brushless DC Motor Drive Half-Bridge
In 12 V or 24 V BLDC motor drives for robotics, e-bikes, and small industrial fans, the IQDH29NE2LM5CGSCATMA1 forms the low-side switch of each half-bridge leg. Its 0.29 mΩ RDS(on) keeps conduction loss low during the PWM low-state, while the 25 V VDS easily handles back-EMF spikes from 12 V windings with derating margin. The exposed pad supports a top-side PCB heatsink for continuous high-current phases, and the 2 V VGS(th) allows the part to be driven directly from a 5 V MCU GPIO with a small charge pump. Compared with integrated half-bridge drivers at the same current, this discrete MOSFET achieves lower RDS(on) per dollar at the cost of an external gate driver.
Recommended
Telecom 48 V Intermediate Bus Converters
Although the IQDH29NE2LM5CGSCATMA1 is a 25 V part, it is used on the secondary 12 V side of 48 V-to-12 V intermediate bus converters (IBC) in telecom and datacom systems. Its ultra-low 0.29 mΩ RDS(on) makes it ideal for the secondary synchronous rectifier where conduction loss dominates total loss. Pairing this 25 V MOSFET with a 100 V primary-side part such as IPL60R105P7AUMA1 lets the converter reach 97 percent peak efficiency, satisfying 80 PLUS Titanium requirements. The exposed pad of the PG-WHTFN-9 package is bonded to a large copper pour for heat extraction, while the dual-side cooling allows top-side heatsinking in dense IBC modules.
Recommended
Battery Protection and Load Switch for Power Tools
Cordless power tools running on 18 V or 20 V battery packs use the IQDH29NE2LM5CGSCATMA1 as a high-side load switch and reverse-battery protection FET. The 25 V VDS covers the fully-charged 20 V pack plus inductive ringing, while the 789 A continuous current at TC handles the inrush from brushed DC motors at startup. Its 0.29 mΩ RDS(on) drops less than 50 mV at 100 A load, preserving battery runtime compared with discrete MOSFETs rated 1 mΩ or higher. Placed in series with the battery positive terminal and driven through a charge pump, the part also acts as a low-loss eFuse when paired with a current-sense amplifier.
Recommended
Recommended Products Summary
Engineering reference data for IQDH29NE2LM5CGSCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQDH29NE2LM5CGSC | IQDH88N06LM5CGSCATMA1 | IQEH54NE2LM7UCGATMA1 | IQEH68NE2LM7UCGATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-WHTFN-9-U02 | PG-WHTFN-9-U02 - same | PG-WHTFN-9-U02 - same | PG-WHTFN-9-U02 - same | PG-WHTFN-9-U02 - same | PG-WHTFN-9-U02 - same |
| Drain-Source Voltage (VDS) | 25 V | 25 V - same | 60 V (+140%) | 25 V - same | 25 V - same | 25 V - same |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | 0.29 mΩ - same | 0.88 mΩ (+203%) | 0.54 mΩ (+86%) | 0.68 mΩ (+134%) | 0.50 mΩ (+72%) |
| Technology Generation | OptiMOS 5 | OptiMOS 5 - same | OptiMOS 5 - same | OptiMOS 7 (newer) | OptiMOS 7 (newer) | OptiMOS 7 (newer) |
| Typical Application | 12 V SMPS, hot-swap | 12 V SMPS - same | 48 V telecom bus | 12 V SMPS, modern | 12 V SMPS, lower current | 12 V SMPS, modern |
Key Differentiators
- Lowest RDS(on) in 25 V OptiMOS 5 family (vs IQDH88N06LM5CGSCATMA1)
- Newer OptiMOS 7 generation available in same footprint (vs IQEH54NE2LM7UCGATMA1)
- Dual-side exposed pad for top and bottom cooling (vs BSC019N04LSTATMA1)
Design Notes
Estimated: at continuous 50 A load on the low-side of a 12 V buck converter the IQDH29NE2LM5CGSCATMA1 dissipates approximately P = I² × RDS(on) = 50² × 0.00029 ≈ 0.73 W. This sits well within the 2.5 W Ta rating, but a top-side heatsink attached to the PG-WHTFN-9 exposed pad is required if the system runs at >100 A continuous or in still air. Use thermal vias in a 4×4 array under the exposed pad and tie the pad to an inner copper plane 70 µm or thicker to keep θJA near 50 °C/W. Always check Diagram 2 of the Infineon datasheet for SOA derating at the actual case temperature in your application.
Place the gate-drive loop (gate resistor → gate → Kelvin source → driver ground) within 5 mm of the FET to minimize parasitic inductance that causes gate ringing and possible dv/dt-induced turn-on. Keep the power loop (input capacitor → drain → source → output capacitor) tight and use a 4-layer PCB with a dedicated ground plane under the FET. The exposed pad must be soldered to a copper pour sized for the expected dissipation, with at least eight 0.3 mm thermal vias for heat extraction. Avoid routing sensitive analog traces under the FET to prevent noise coupling.
Do not drive the IQDH29NE2LM5CGSCATMA1 with VGS below 4.5 V - the part may operate in the linear region with high conduction loss and rapid self-heating. Always include a gate-source resistor of 10 kΩ to prevent floating-gate turn-on during power-up. Avoid exceeding 25 V VDS even briefly; the gate oxide is rated only to ±20 V VGS and is destroyed by 25 V transients on the drain. Finally, the 2 V typical VGS(th) shifts 0.5-1 V over temperature, so verify turn-on at cold-temperature startup with the chosen gate-drive voltage.
Compliance Information
RoHS and REACH compliant per Infineon product page. AEC-Q100 not applicable - this is a commercial-grade OptiMOS 5 part. Conflict-minerals statement available on Infineon sustainability page.
