IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
MPN: IQEH50NE2LM7UCGSCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.65 | $26.50 |
| 100 | $2.32 | $232.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.78 | $1,780.00 |
Drop-in alternatives for IQEH50NE2LM7UCGSCATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IQEH50NE2LM7UCGSC
✅ Drop-In📋 Reference alternative (not in catalog)
IQE220N15NM5CGSCATMA1
✅ Drop-In✓ In Stock
$2.18 / Unit
View Datasheet →BSC014NE2LSIATMA1
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View Datasheet →ISC037N12NM6ATMA1
✅ Drop-In✓ In Stock
$3.62 / Unit
View Datasheet →ISC015N06NM5LF2ATMA1
✅ Drop-In✓ In Stock
$2.21 / Unit
View Datasheet →IQEH50NE2LM7UCGSCATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 25 V |
| Continuous Drain Current (ID) at TA | 54 A |
| Continuous Drain Current (ID) at TC | 422 A |
| RDS(on) Max | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | 2 V |
| Power Dissipation (PD) at TA | 2.5 W |
| Power Dissipation (PD) at TC | 150 W |
| Maximum Junction Temperature | 175 °C |
| Package | PG-WHTFN-9-1 (surface mount) |
| Mounting Type | Surface Mount |
| Series | OptiMOS 7 |
| Technology | Silicon N-Channel Power MOSFET |
IQEH50NE2LM7UCGSCATMA1 pg-whtfn-9-1 (surface mount) Pin Configuration Guide
Complete pinout information for IQEH50NE2LM7UCGSCATMA1 (pg-whtfn-9-1 (surface mount) package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for IQEH50NE2LM7UCGSCATMA1.
Refer to the datasheet for full pin configuration.
Safe Operating Area
Typical Applications
IQEH50NE2LM7UCGSCATMA1 is suitable for 6 applications: AI Server Point-of-Load Converters, Data Center 48 V Intermediate Bus Converters, Telecom Hot-Swap and OR-ing FETs, Synchronous Rectification in Server VRMs, Industrial High-Current DC-DC Modules, Battery Protection and Power Path Management.
AI Server Point-of-Load Converters
The IQEH50NE2LM7UCGSCATMA1 is well matched to 12 V point-of-load (PoL) converters feeding AI accelerator cores. Its 0.5 mΩ max RDS(on) and 422 A pulsed TC current let it serve as a synchronous rectifier with very low conduction loss, while the 25 V VDS rating provides comfortable headroom above the 12 V nominal bus. The PG-WHTFN-9-1 footprint supports dense VRM layouts typical of AI accelerator boards, where every milliohm of RDS(on) directly improves efficiency and reduces thermal load.
Recommended
Data Center 48 V Intermediate Bus Converters
For 48 V intermediate bus architectures, the IQEH50NE2LM7UCGSCATMA1 can be used on the secondary-side synchronous rectification stage where high current and low loss are mandatory. The 25 V VDS allows placement on the 12 V output side of a multi-stage IBC. Its 175°C maximum junction temperature supports sustained high-current operation in well-cooled server chassis, and the 0.5 mΩ RDS(on) keeps conduction loss manageable even at hundreds of amps.
Recommended
Telecom Hot-Swap and OR-ing FETs
The IQEH50NE2LM7UCGSCATMA1 serves as a hot-swap or OR-ing FET on -48 V telecom distribution boards where its low RDS(on) minimizes steady-state dissipation while the 25 V class fits 12 V load-side rails. The 54 A continuous TA rating supports typical 240-360 W load circuits. PG-WHTFN-9-1's top-side thermal pad aids board-level cooling, and the Infineon OptiMOS 7 process provides tight threshold distribution for predictable current sharing across redundant supplies.
Recommended
Synchronous Rectification in Server VRMs
The IQEH50NE2LM7UCGSCATMA1 is engineered as a synchronous rectifier (low-side FET) in multi-phase buck VRMs for server CPUs and GPUs. With 0.5 mΩ max RDS(on) and 2 V typical gate threshold, it pairs with a companion high-side MOSFET and a 3.3 V-capable gate driver. Its 175°C rating and 150 W PD at TC enable sustained high current per phase, while the surface-mount PG-WHTFN-9-1 package reduces loop inductance compared to DPAK, helping minimize switching loss.
Recommended
Industrial High-Current DC-DC Modules
In industrial 24 V to 12 V buck modules and high-current DC-DC bricks, the IQEH50NE2LM7UCGSCATMA1 fits as the synchronous rectifier or main switch on the 12 V side. Its 0.5 mΩ RDS(on) and 422 A pulsed rating support kilowatt-class brick converters. The wide -55°C to +175°C operating range suits industrial environments, and the small PG-WHTFN-9-1 footprint allows compact brick designs while the top-side thermal pad interfaces directly to a heatsink or cold plate.
Recommended
Battery Protection and Power Path Management
For 12 V battery management systems and power-path OR-ing in industrial UPS or e-mobility charging infrastructure, the IQEH50NE2LM7UCGSCATMA1 can be used as a low-loss disconnect FET. Its 0.5 mΩ RDS(on) minimizes steady-state voltage drop across the protection element, and the 25 V VDS comfortably exceeds 12 V battery transients. The PG-WHTFN-9-1 package provides mechanical robustness and good thermal performance for continuous conduction in power-path circuits.
Recommended
Recommended Products Summary
Engineering reference data for IQEH50NE2LM7UCGSCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQEH50NE2LM7UCGSC | IQE220N15NM5CGSCATMA1 | BSC014NE2LSIATMA1 | ISC037N12NM6ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-WHTFN-9-1 | PG-WHTFN-9-1 | PG-WHTFN-9-1 | PG-WHTFN-9-1 | PG-WHTFN-9-1 | PG-WHTFN-9-1 |
| VDS Max | 25 V | 25 V | 150 V | 25 V | 120 V | 60 V |
| RDS(on) Max | 0.5 mΩ | 0.5 mΩ | 22 mΩ | 1.4 mΩ | 3.7 mΩ | 1.5 mΩ |
| Continuous ID @ TA | 54 A | 54 A | 55 A | 40 A | 46 A | 55 A |
| PD @ TC | 150 W | 150 W | 150 W | 89 W | 83 W | 104 W |
| Max Junction Temp | 175 °C | 175 °C | 175 °C | 150 °C | 175 °C | 175 °C |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 | OptiMOS 2 | OptiMOS 6 | OptiMOS 5 LF2 |
| Target Application | AI / Data Center PoL | AI / Data Center PoL | Industrial HV | Server VRM | Industrial MV | Server / PoL |
Key Differentiators
- Lowest RDS(on) in the Infineon 25 V OptiMOS 7 PG-WHTFN family (vs BSC014NE2LSIATMA1)
- 25 V VDS optimized for 12 V synchronous rectification (vs IQE220N15NM5CGSCATMA1)
- OptiMOS 7 generation with 175°C junction rating (vs ISC015N06NM5LF2ATMA1)
Design Notes
Estimated: At continuous drain current of 54 A at TA and 422 A pulsed at TC, the IQEH50NE2LM7UCGSCATMA1 dissipates substantial heat in the PG-WHTFN-9-1 package. Infineon's datasheet characterization uses a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² of 70 µm copper for the drain. For full SOA utilization, follow this minimum copper area and connect the top-side thermal pad to a copper pour or cold plate with multiple thermal vias.
Use a Kelvin-source gate drive connection to fully realize the 0.5 mΩ RDS(on) specification; sharing the source bond wire between gate-drive return and high-current return path adds ~0.2-0.4 mΩ of effective resistance and degrades efficiency at high current. Place the gate-driver and gate resistor within 5 mm of the gate pad to minimize the gate-drive loop inductance, which directly controls switching loss.
Estimated: With 2.5 W PD at TA, the package can dissipate in still air on a moderate PCB; at the 150 W TC rating, the package requires significant cooling. Use the datasheet SOA diagram to verify operation under worst-case load transients, and de-rate below 175°C maximum junction temperature - a 25-30°C margin is recommended for production reliability per typical power-electronics design practice.
Do not parallel this part with significantly different RDS(on) without adequate gate-source resistor balancing; OptiMOS 7 has positive temperature coefficient of RDS(on), but threshold voltage variation between parallel units can still cause current imbalance. Verify peak drain current under worst-case operating conditions (input surge, output short, hot-swap) against the SOA. Confirm 25 V VDS headroom above maximum bus transients in your system.
Compliance Information
RoHS and lead-free status inferred from Infineon OptiMOS 7 standard product compliance per product page; AEC-Q100 automotive grade not stated in the verified distributor listings.
