IQDH29NE2LM5CGSCATMA1 vs IQEH54NE2LM7UCGATMA1 Comparison

Detailed side-by-side comparison of IQDH29NE2LM5CGSCATMA1 by Infineon and IQEH54NE2LM7UCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQDH29NE2LM5CGSCATMA1

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 βœ“ Active
Infineon
IQEH54NE2LM7UCGATMA1

IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 βœ“ Active

Specification Comparison

Parameter IQDH29NE2LM5CGSCATMA1 IQEH54NE2LM7UCGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.84 $1.95
FET Type N-Channel β€”
Technology OptiMOS 5 Power-Transistor β€”
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (Ta) 75 A β€”
Continuous Drain Current (Tc) 789 A β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 278 W β€”
Maximum On-Resistance RDS(on) 0.29 mΞ© β€”
Gate Threshold Voltage VGS(th) 2 V (typ) β€”
Package PG-WHTFN-9-U02 (WHTFN EP) PG-TTFN-9-3
Pin Count 9 β€”
Mounting Type Surface Mount Surface Mount
Cooling Dual-side exposed pad (top + bottom) β€”
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 7 Power-Transistor
Channel Type β€” N-Channel
Continuous Drain Current (ID) at Ta β€” 52 A
Continuous Drain Current (ID) at Tc β€” 406 A
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 150 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance (RDS(on)) at 10V VGS β€” [DATA_NEEDED: RDS(on) max in mohm at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical in nC]
Operating Temperature Range β€” -55C to +150C (typical MOSFET range)

Datasheets & Resources

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