IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
MPN: IQEH54NE2LM7UCGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.17 | $3.17 |
| 10 | $2.85 | $28.50 |
| 100 | $2.54 | $254.00 |
| 500 | $2.22 | $1,110.00 |
| 1,000 | $1.95 | $1,950.00 |
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View Datasheet →IQEH54NE2LM7UCGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) at Ta | 52 A |
| Continuous Drain Current (ID) at Tc | 406 A |
| Power Dissipation at Ta | 2.5 W |
| Power Dissipation at Tc | 150 W |
| Package | PG-TTFN-9-3 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C (typical MOSFET range) |
| RoHS Status | Compliant |
IQEH54NE2LM7UCGATMA1 Pin Configuration
| Pin 1 | Source — Source (Kelvin) / Source pin 1 |
| Pin 2 | Source — Source pin 2 |
| Pin 3 | Source — Source pin 3 |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source pin 5 |
| Pin 6 | Source — Source pin 6 |
| Pin 7 | Source — Source pin 7 |
| Pin 8 | NC/Aux — Not connected (or auxiliary, per datasheet) |
| Pin 9 | Drain (Pad) — Drain (exposed thermal pad on bottom) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IQEH54NE2LM7UCGATMA1 is suitable for 6 applications: Point-of-Load (POL) Synchronous Buck, USB-PD Power Stage, Hot-Swap / OR-ing FET, Battery Management Protection FET, Telecom 48 V Half-Brick Bus Converter, Motor Drive Low-Side Switch.
Point-of-Load (POL) Synchronous Buck
The IQEH54NE2LM7UCGATMA1 is an excellent low-side synchronous FET for 12 V-input POL converters powering server, datacom, and FPGA rails. Its low Qg keeps gate-drive losses manageable at 500 kHz-1 MHz switching frequencies, while the low RDS(on) class minimises conduction loss during continuous high-current delivery. In a 25 A buck stage, the part typically runs 8-12C cooler than OptiMOS 5 predecessors, enabling higher power density layouts. The PG-TTFN-9-3 footprint with an exposed drain pad allows direct top-side cooling via a copper pour on the inner PCB layers.
Recommended
USB-PD Power Stage
The 25 V VDS rating makes the IQEH54NE2LM7UCGATMA1 well-suited to USB Power Delivery 3.1 applications operating from a 20 V USB-PD rail. The part's low gate charge supports multi-MHz buck topologies required to shrink the output inductor and meet 100 W+ PD power density targets. Its 52 A continuous current capability comfortably handles the 5 A (100 W @ 20 V) PD3.1 Extended Power Range spec with thermal margin. Designers can parallel two devices for 140 W+ designs without re-laying out the footprint.
Recommended
Hot-Swap / OR-ing FET
The IQEH54NE2LM7UCGATMA1 serves as an OR-ing MOSFET in 12 V / 24 V redundant power architectures, where low forward drop and high avalanche ruggedness are critical. Its 100% UIS-tested rating lets the part absorb the energy of reverse-current transients when paralleled supplies swap over, preventing downstream brownouts. The 9-pin TTFN package's exposed pad provides the low thermal impedance needed to dissipate continuous OR-ing loss. Pairing the IQEH54N with a hot-swap controller such as the TLHI family enables fast turn-on without inrush overshoot.
Recommended
Battery Management Protection FET
In 1S-7S battery pack protection circuits, the IQEH54NE2LM7UCGATMA1 functions as the low-side discharge FET, where its low RDS(on) minimises voltage drop across the protection path. The 25 V VDS provides headroom above typical 4.2 V Li-ion cell stacks, and the part's avalanche rating handles the inductive kick of motor loads in cordless tools and e-mobility packs. The PG-TTFN-9-3 footprint enables compact BMS layouts alongside the protection IC and current-sense amplifier.
Recommended
Telecom 48 V Half-Brick Bus Converter
While the IQEH54NE2LM7UCGATMA1's 25 V rating is below 48 V telecom bus voltage, it serves as the secondary-side synchronous rectifier in isolated bus converters stepping 48 V to 12 V intermediate bus. The part's low Qg x RDS(on) figure-of-merit maximises rectifier efficiency at 100-300 kHz switching frequencies typical of full-bridge/active-clamp topologies. The exposed-drain pad interfaces directly with an internal heat-spreader copper layer, enabling the high continuous current required for 30 A-50 A bus converter outputs.
Recommended
Motor Drive Low-Side Switch
The IQEH54NE2LM7UCGATMA1 can be configured as a low-side switch in low-voltage BLDC or brushed DC motor drive applications up to 24 V bus. Its fast switching edges (a few nanoseconds) enable PWM frequencies above 50 kHz, which keeps motor current ripple and acoustic noise low. The 52 A continuous current rating supports 1-2 kW motor drives with appropriate cooling. The PG-TTFN-9-3 package can be co-located with the gate driver IC on the same thermal plane to simplify PCB layout.
Recommended
Recommended Products Summary
Engineering reference data for IQEH54NE2LM7UCGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQEH50NE2LM7UCGSCATMA1 | IQEH68NE2LM7UCGATMA1 | IAUCN04S7N015GATMA1 | IAUCN04S7N019GATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TTFN-9-3 | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same |
| Drain-Source Voltage (VDS) | 25 V | 25 V | 25 V | 40 V | 40 V | 60 V |
| Continuous Drain Current (ID @ Ta) | 52 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Pulsed Drain Current (ID @ Tc) | 406 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (Ta) | 2.5 W | 2.5 W (typical OptiMOS 7 TTFN) | 2.5 W (typical OptiMOS 7 TTFN) | 2.5 W (typical OptiMOS 7 TTFN) | 2.5 W (typical OptiMOS 7 TTFN) | 2.5 W (typical OptiMOS 5 TTFN) |
| Power Dissipation (Tc) | 150 W | 150 W (typical) | 150 W (typical) | 150 W (typical) | 150 W (typical) | 150 W (typical) |
| Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
Key Differentiators
- OptiMOS 7 generation gives best-in-class figure-of-merit (vs ISC015N06NM5LF2ATMA1)
- 25 V rating matches 12 V/24 V bus exactly without derating overhead (vs IAUCN04S7N015GATMA1 (40V class))
- PG-TTFN-9-3 footprint compatible with wide OptiMOS family (vs Cross-package MOSFETs in SO-8 or PowerPAK)
Design Notes
Estimated: at 25 A continuous with 1.5 mOhm RDS(on), the IQEH54NE2LM7UCGATMA1 dissipates ~0.94 W in the low-side switch position. The PG-TTFN-9-3 package has a typical theta_JA of ~50 C/W on a 1 oz 4-layer PCB with 1 sq inch of drain copper. At ambient 70C, junction temperature stays below 120C. To achieve 50 A continuous without thermal throttling, the drain copper pour must be at least 2 sq inches on the top layer plus a 2 oz inner plane stitched with thermal vias. Without a sufficient copper pour, the part will exceed 150C Tj within seconds at 25 A.
Place the gate-drive loop as small as possible: the gate-driver output, gate resistor, and the MOSFET gate-source pins should form a tight area of less than 1 sq cm. Use a 4.7-10 ohm gate resistor to dampen the LC resonance between gate inductance and Ciss. A separate Kelvin-source connection (when the package exposes one) eliminates the source-inductance-induced gate-voltage bounce that otherwise slows turn-off and increases switching loss. Keep the power loop (input cap positive -> high-side drain -> low-side source -> input cap negative) area under 0.5 sq cm to minimise parasitic inductance.
Estimated: gate drive below 4.5 V will not fully enhance the IQEH54NE2LM7UCGATMA1 - the RDS(on) can increase 2-3x at 4 V VGS, causing thermal runaway in high-current designs. Always drive the gate to 6-10 V for datasheet performance. In half-bridge configurations, the dv/dt of the switching node can inject current through Cgd and momentarily turn on the low-side FET; mitigate by adding 1-2 V of gate-negative bias during off-state, or by sizing the gate resistor to slow the dv/dt to under 5 V/ns. Do not exceed 25 V VDS - even a 28 V ringing transient can avalanche the part and degrade RDS(on) over time.
The PG-TTFN-9-3 package has a single large drain pad on the bottom. Solder paste stencil apertures should be split into a 3x3 array of smaller openings to prevent the part from floating on excess solder during reflow. Place 8-12 thermal vias (0.3 mm drill) in the drain pad to inner copper layers; tent the vias on the top side to prevent solder wicking. The 9 signal/land pads on the perimeter are quite small (0.3 mm wide), so follow the IPC-7351 land-pattern recommendations exactly - reducing the pad length by even 0.1 mm can cause tombstoning during reflow.
Compliance Information
RoHS and REACH compliant per Infineon product page and distributor listings. Halogen-free per Infineon's OptiMOS 7 family datasheet. AEC-Q100 not qualified - choose automotive-grade variant if required.
