IQDH35N03LM5SCATMA1 vs IQE013N04LM6ATMA1 Comparison
Detailed side-by-side comparison of IQDH35N03LM5SCATMA1 by Infineon and IQE013N04LM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH35N03LM5SCATMA1
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 β ActiveInfineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQDH35N03LM5SCATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $0.71 |
| Manufacturer | Infineon Technologies | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 5 (trench, shielded-gate) | OptiMOS N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at Ta | 66 A | β |
| Pulsed Drain Current (IDM) at Tc | 700 A | β |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 278 W | β |
| Package | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | -55 Β°C to +175 Β°C |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | Compliant |
| Marking | IQDH35N03LM5S | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (Ta) | β | 31 A |
| Continuous Drain Current (Tc) | β | 205 A |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 107 W |
| On-Resistance RDS(on) max | β | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | β | 1.35 mΞ© @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (typ) |
| Source-Down Topology | β | Yes (flip-chip die attach, drain on top thermal pad) |