IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: IQDH35N03LM5SCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.95 | $3.95 |
| 10 | $3.55 | $35.50 |
| 100 | $3.15 | $315.00 |
| 500 | $2.78 | $1,390.00 |
| 1,000 | $2.42 | $2,420.00 |
| 5,000 | $2.05 | $10,250.00 |
IQDH35N03LM5SCATMA1 Overview
A power MOSFET is a voltage-controlled, majority-carrier semiconductor switch that uses an insulated gate to modulate a conduction channel between source and drain terminals. Modern low-voltage MOSFETs, including OptiMOS 5, are trench-gate N-channel devices optimized for synchronous rectification, OR-ing, and high-frequency DC-DC conversion. Within the power management hierarchy, MOSFETs sit beneath DC-DC converters and synchronous buck/boost controllers as the commutation element that defines conduction loss, switching loss, and overall efficiency. The IQDH35N03LM5SCATMA1 belongs to Infineon's 30V Source-Down family designed to enable dual-sided PCB cooling in SMPS and telecom applications.
Key features include a 0.35 mOhm maximum RDS(on) at VGS=10V, an ultra-low gate charge Qg optimized for high-frequency switching, and a Source-Down package that flips the source to the top of the die for direct heatsink attachment or top-side copper cooling. The device uses Infineon's OptiMOS 5 trench technology, which combines a shielded-gate structure with a low-resistance epitaxial layer. The Source-Down flip-chip die attach reduces package parasitic source inductance by approximately 50% compared to standard wire-bond PQFN, which directly improves switching figure-of-merit (FOM = RDS(on) x Qg) and reduces voltage overshoot in hard-switched topologies.
Typical applications include synchronous rectification in 12V-30V server and telecom DC-DC converters, battery management OR-ing and hot-swap controllers, USB-PD and e-mobility high-current rails, and point-of-load (POL) regulators for high-performance computing. The Source-Down footprint also supports efficient top-side cooling in space-constrained modules.
When designing with this part, ensure the PCB land pattern is the PQFN 5x6 Source-Down variant (not the standard PQFN 5x6) since the Source-Down package has the thermal pad on the source potential. Use a Kelvin-source connection to the gate driver return to suppress gate-oscillation and maximize the benefit of the ultra-low RDS(on).
This page synthesizes distributor stock and pricing, a drop-in alternatives table covering both same-brand and cross-brand Source-Down 30V MOSFETs, and practical thermal and layout notes not found in the Infineon datasheet summary.
Drop-in alternatives for IQDH35N03LM5SCATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQDH35N03LM5SCATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Power Dissipation (Tc), Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQDH35N03LM5CGSCATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IQDH29NE2LM5CGSCATMA1
✅ Drop-In✓ In Stock
$1.84 / Unit
View Datasheet →IQDH88N06LM5CGSCATMA1
✅ Drop-In✓ In Stock
$2.31 / Unit
View Datasheet →IQE013N04LM6ATMA1
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →IPC50N04S5L5R5ATMA1
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →IAUC60N04S6L030HATMA1
✅ Drop-In✓ In Stock
$0.94 / Unit
View Datasheet →IQDH35N03LM5SCATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Transistor Type | N-Channel MOSFET |
| Technology | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) max | 30 V |
| Gate-Source Voltage (VGS) max | ±20 V |
| Continuous Drain Current (ID) at Ta | 66 A |
| Pulsed Drain Current (IDM) at Tc | 700 A |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | 2.5 W |
| Power Dissipation (PD) at Tc | 278 W |
| Package | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 C to +175 C |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
| Marking | IQDH35N03LM5S |
IQDH35N03LM5SCATMA1 Pin Configuration
| Pin 1 | Source — Source (also tied to bottom exposed pad per Source-Down package) |
| Pin 2 | Source — Source (also tied to bottom exposed pad per Source-Down package) |
| Pin 3 | Source — Source (also tied to bottom exposed pad per Source-Down package) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source (also tied to bottom exposed pad per Source-Down package) |
| Pin 6 | Source — Source (also tied to bottom exposed pad per Source-Down package) |
| Pin 7 | Source — Source (also tied to bottom exposed pad per Source-Down package) |
| Pin 8 | Drain — Drain terminal |
Safe Operating Area (estimated for 30V OptiMOS 5 PQFN 5x6 Source-Down)
Typical Applications
IQDH35N03LM5SCATMA1 is suitable for 6 applications: 12V-30V Synchronous Rectification, Battery Management OR-ing and Hot-Swap, USB-PD and E-Mobility High-Current Rails, Server and Telecom Point-of-Load (POL) Regulators, Industrial 24V Bus Motor Drive, Solar Microinverter and Energy Storage.
12V-30V Synchronous Rectification
The IQDH35N03LM5SCATMA1 is purpose-built for the low-side synchronous FET in 12V, 19V, and 24V buck converters that power server, telecom, and industrial point-of-load stages. Its 0.35 mOhm max RDS(on) at VGS=10V limits conduction loss to approximately 1.5W at 66A continuous drain, while the Source-Down PQFN 5x6 footprint cuts package parasitic source inductance by ~50% versus wire-bonded PQFN, reducing switching loss and voltage overshoot. Designers place it as the low-side switch paired with a high-side 30V OptiMOS driver IC; the 700A pulsed rating handles in-rush during output short-circuit recovery without exceeding SOA. The result is converter efficiency above 96% at full load in a compact 5x6 mm footprint.
Recommended
Battery Management OR-ing and Hot-Swap
The IQDH35N03LM5SCATMA1 is well-suited as the OR-ing MOSFET in redundant 12V-24V power architectures used in server backplanes, telecom rectifiers, and battery-backed industrial systems. The 30V VDS provides adequate margin over 24V nominal buses with load-dump transients, and the 0.35 mOhm RDS(on) keeps voltage drop below 23 mV at 66A. The Source-Down package's top-side source pad allows direct heatsink attachment for continuous high-current conduction, and the 700A pulsed rating handles the in-rush during hot-swap events. Place the FET in-line with the supply return, drive the gate via a hot-swap controller with a soft-start ramp, and use a Kelvin-source trace to suppress gate bounce during turn-on.
Recommended
USB-PD and E-Mobility High-Current Rails
In USB Power Delivery 3.1 EPR (28V/36V/48V) and 48V e-mobility auxiliary rails, the IQDH35N03LM5SCATMA1's 30V VDS makes it ideal for the lower-voltage sub-rails (5V, 12V, 20V) and for synchronous rectification in 24V e-bike battery packs. The 0.35 mOhm RDS(on) keeps conduction loss negligible at 100W USB-PD power levels, and the 5x6 mm Source-Down footprint allows the FET to be placed on a small PCB alongside the protocol controller. The 700A pulsed rating also supports USB-PD's programmable in-rush capabilites without exceeding thermal limits. Use it as the buck-side synchronous FET in a 4-switch buck-boost topology to deliver high efficiency across the wide USB-PD output range.
Recommended
Server and Telecom Point-of-Load (POL) Regulators
The IQDH35N03LM5SCATMA1 is widely used in 48V-to-POL intermediate bus converters that feed CPU, GPU, and ASIC core rails in hyperscale servers and telecom equipment. The 0.35 mOhm RDS(on) minimizes conduction loss in the 30V synchronous FET pair, and the Source-Down footprint allows direct top-side liquid-cooling or heatsink attach in dense server racks. The 278W power dissipation rating at Tc also gives designers significant thermal headroom when designing for sustained 200W+ intermediate bus converter stages. Use it as the low-side FET in a 30V bridge, paired with a digital controller such as the XDPP1140 family for telemetry and adaptive voltage scaling.
Recommended
Industrial 24V Bus Motor Drive
The IQDH35N03LM5SCATMA1 functions as the low-side power stage in 24V industrial automation and small-motor drive inverters, where it switches tens of amps at high PWM frequency to drive brushed and brushless DC loads. The 30V VDS provides safety margin over 24V nominal industrial bus (which can reach 30V under transients), and the 0.35 mOhm RDS(on) keeps conduction loss in the FET stage well under 5W at 100A peak. The Source-Down package simplifies thermal design by allowing direct attachment of the FET to a chassis heatsink via the source pad, eliminating the need for an insulator pad. Gate-drive is typically a 24V bootstrap half-bridge such as the 2EDL family, with a gate resistor in the 2-10 ohm range to control switching speed.
Recommended
Solar Microinverter and Energy Storage
The IQDH35N03LM5SCATMA1 is used in sub-30V solar microinverter and battery energy storage (BES) power stages, where its 0.35 mOhm RDS(on) minimizes conduction loss in synchronous buck-boost conversion between solar panel strings and battery banks. The 30V VDS accommodates 24V battery systems and 24V solar arrays with margin, and the 700A pulsed rating handles the in-rush of capacitive battery loads during connection events. The Source-Down footprint's top-side thermal pad is particularly valuable in sealed microinverter IP67 enclosures, where heat extraction is limited. Use the part on the high-current legs of the bidirectional DC-DC stage with an MCU or DSP controller such as the XMC family.
Recommended
Recommended Products Summary
Engineering reference data for IQDH35N03LM5SCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQDH35N03LM5CGSCATMA1 | IQDH29NE2LM5CGSCATMA1 | IQDH88N06LM5CGSCATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-WHSON-8-U02 (PQFN 5x6 Source-Down) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down) - same | PG-WHSON-8-U02 (PQFN 5x6 Source-Down) - same | PG-WHSON-8-U02 (PQFN 5x6 Source-Down) - same | PG-WHSON-8-U02 (PQFN 5x6 Source-Down) - same |
| Drain-Source Voltage (VDS) max | 30 V | 30 V (identical) | 25 V | 60 V | 40 V |
| On-State Resistance RDS(on) max | 0.35 mOhm @ VGS=10V | 0.35 mOhm (identical) | 0.45 mOhm (approx) | 0.40 mOhm (approx) | 1.3 mOhm (approx) |
| Continuous Drain Current (ID) at Ta | 66 A | 66 A (identical) | 50 A (approx) | 70 A (approx) | 40 A (approx) |
| Pulsed Drain Current (IDM) | 700 A | 700 A (identical) | 500 A (approx) | 750 A (approx) | 400 A (approx) |
| Technology | OptiMOS 5 (trench, shielded-gate) | OptiMOS 5 (identical) | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 |
| Source-Down Cooling | Yes (top-side source pad) | Yes (identical) | Yes | Yes | Yes |
| Unit Price (qty 100, as of 2026-09-15) | $3.15 | $3.15 (approx, identical die) | $2.95 (approx) | $3.55 (approx) | $1.95 (approx) |
Key Differentiators
- Source-Down package with top-side cooling (vs Standard PQFN 5x6 (e.g. wire-bonded IQE013N04LM6 family))
- Lowest RDS(on) in 30V PQFN 5x6 Source-Down family (vs IQE013N04LM6ATMA1 (40V OptiMOS 6))
- 700A pulsed drain current for in-rush robustness (vs IPC50N04S5L5R5ATMA1 (40V, lower IDM))
Design Notes
Use the Source-Down land pattern from the Infineon IQDH35N03LM5 datasheet, NOT a standard PQFN 5x6 footprint. The Source-Down package has the source connected to the bottom exposed pad (and a top-side source pad for heatsink attach), whereas a standard PQFN 5x6 has the drain on the bottom pad. Mixing the two land patterns will result in a non-functional board. The Source-Down footprint allows a direct top-side heatsink or top-side copper pour to be soldered onto the source pad, providing dual-sided cooling that cuts thermal resistance by approximately 50% compared to bottom-side-only cooling.
At 66A continuous drain current and 0.35 mOhm RDS(on), the IQDH35N03LM5SCATMA1 dissipates approximately 1.5W in steady state. With the 2.5W Ta rating and the Source-Down package's 50 C/W theta_JB (estimated), junction temperature rise above the bottom-side case is approximately 75 C. Use a top-side copper heatsink or attach a small aluminum fin to the top source pad to keep the junction below 150 C at full load. The 278W Tc rating assumes the bottom case is held at 25 C, so direct PCB cold-plate cooling dramatically extends the SOA envelope.
Use a Kelvin-source connection for the gate-drive return path. Connect the gate-driver ground to the source pin of the FET (not the bottom exposed pad) with a dedicated trace that bypasses the high-current source path. This suppresses gate-oscillation caused by the package's source inductance and allows the full 0.35 mOhm RDS(on) benefit to be realized at high switching frequencies (300 kHz-1 MHz). Place a 1-2 ohm gate resistor in series with the gate pin to control the turn-on di/dt and limit ringing on the gate-drive trace.
Do not exceed the 30V VDS maximum, even momentarily. The 30V rating has no design margin for 24V industrial bus load-dump transients, which can reach 35-40V on long cables. Add a 30V TVS clamp (such as a SMAJ30A) at the drain if load-dump compliance is required. Also avoid VGS transients above +/-20V; gate-drive supplies should be clamped to 12V typical. Finally, do not assume the Source-Down part is interchangeable with a standard PQFN 5x6 30V MOSFET even if it has similar RDS(on) - the bottom pad polarity and pinout are different.
Compliance Information
RoHS compliant and lead-free matte-tin finish per Infineon product page. MSL1 (unlimited floor life) per J-STD-020. Not AEC-Q100 qualified - this is an industrial/consumer grade part; Infineon offers AEC-Q100 variants in other Source-Down family members for automotive use.
